STPS20SM100SG-TR

RTR025P02
Transistors
1/4
Switching (20V, 2.5A)
RTR025P02
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon P-channel
MOS FET
zExternal dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : TY
TSMT3
0.7±0.1
0.85±0.1
2.8±0.2
0.4
+0.1
0.05
1.6
+0.2
0.1
0.16
0.3~0.6
+0.1
0.06
Each lead has
same dimensions
(2)
(1)
(3)
0~0.1
2.9±0.1
1.9±0.2
0.95 0.95
1.0MAX.
zPackaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
RTR025P02
TL
3000
Type
zAbsolute maximum ratings (Ta=25°C)
1
1
2
Parameter
VV
DSS
Symbol
20
VV
GSS
±12
AI
D
±2.5
AI
DP
±10
AI
S
0.8
AI
SP
3.2
WP
D
1.0
°CTch 150
°CTstg 55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Source current
(Body diode)
zEquivalent circuit
(1) Gate
(2) Source
(3) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(3)
(1)
(2)
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-A) 125
Parameter Symbol Limits Unit
Channel to ambient
RTR025P02
Transistors
2/4
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Body diode characteristics (source-drain characteristics)
V
SD
−−1.2 VForward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Min.
−−±10 µAV
GS
=±12V, V
DS
=0V
V
DD
15V
Typ. Max.
Unit
Conditions
20 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 20V, V
GS
=0V
0.7 −−2.0 V V
DS
= 10V, I
D
= 1mA
70 95 I
D
= 2.5A, V
GS
= 4.5V
75 105 m
m
m
I
D
= 2.5A, V
GS
= 4.0V
115 160 I
D
= 1.25A, V
GS
= 2.5V
2.3 −−SV
DS
= 10V, I
D
= 1.2A
630 pF V
DS
= 10V
110
75
pF V
GS
=0V
12
pF f=1MHz
18
ns
50
ns
20
ns
7
ns
1.5
nC
2.0
nC V
GS
=
4.5V
−−nC I
D
=
2.5A
I
S
= 0.8A, V
GS
=0V
V
DD
15V
I
D
= 1.25A
V
GS
= 4.5V
R
L
=12
R
GS
=10
Pulsed
RTR025P02
Transistors
3/4
zElectrical characteristic curves
0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
Fig.1
Typical Transfer Characteristics
V
DS
= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01 10.1 10
DRAIN CURRENT : I
D
(A)
1
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=25°C
Pulsed
V
GS
= −2.5V
V
GS
= −4.0V
V
GS
= −4.5V
V
GS
= −4.5V
Pulsed
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
0.1 1 10
10
100
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1 1 10
10
100
1000
V
GS
=
2.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0 0.5 1.0 1.5 2.0
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT : I
DR
(A)
V
GS
=0V
Pulsed
Fig.6 Reverse Drain Current
vs.Source-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
10000
10
100
1000
Ta=25°C
f=1MHz
V
GS
=0V
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
= −15V
V
GS
= −4.5V
R
G
=10
Pulsed
Fig.8 Switching Characteristics
t
d (off)
t
r
t
f
t
d (on)
01234 7656
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.9
Dynamic Input Characteristics
Ta=25°C
V
DD
= −15V
I
D
= −2.5A
R
G
=10
Pulsed

STPS20SM100SG-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 20A 100V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet