VUO125-16NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.07
R 0.6 K/W
R
min.
150
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
205 WT = 25°C
C
R K/W
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.34
T = 25°C
VJ
150
V
F0
V0.76T = °C
VJ
150
r
F
3.6
mΩ
V0.97T = °C
VJ
I = A
F
V
50
1.31
I = A
F
150
I = A
F
150
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
58
unction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.80
1.95
11.7
11.3
kA
kA
kA
kA
1.53
1.65
16.2
15.7
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.30
IXYS reserves the right to change limits, conditions and dimensions.
20130612aData according to IEC 60747and per semiconductor unless otherwise specified
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