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DMMT3904WQ-7-F

P1-P3P4-P6
DMMT3904W
Document number: DS30311 Rev. 12 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMMT3904W
40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363
Features
• BVceo > 40V
• I
C
= 200mA high Collector Current
• Pair of NPN transistors that are intrinsically matched (Note 1)
• 2% Matching on Current Gain (h
FE
)
• 2mV Matching on Base-Emitter Voltage (V
BE
)
• Fully internally isolated in a small surface mount package
• Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
• Halogen and Antimony Free. "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 5)
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin Finish. Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Applications
• Current mirrors
• Differential and instrumentation amplifiers
• Comparators
Ordering Information (Note 4 & 5)
Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DMMT3904W-7-F AEC-Q101 K4A 7 8 3,000
DMMT3904WQ-7-F Automotive K4A 7 8 3,000
Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
6. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2010
2011 2012 2013 2014 2015
2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Device Schematic and Pin-Out
Top View
K4A = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 2 = February)
SOT363
e3
DMMT3904W
Document number: DS30311 Rev. 12 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMMT3904W
Absolute Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current
I
C
200 mA
Thermal Characteristics – Total Device (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 7) Total Device
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 7)
R
θ
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 7. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics – Total Device
DMMT3904W
Document number: DS30311 Rev. 12 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMMT3904W
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60
⎯
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage(Note 9)
BV
CEO
40
⎯
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
⎯
⎯
V
I
E
= 100µA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
⎯
50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
⎯
⎯
50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
40
70
100
60
30
⎯
⎯
⎯
300
⎯
⎯
⎯
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
200
300
mV
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
⎯
⎯
850
950
mV
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 10) h
FE1
/ h
FE2
⎯
1 2 %
I
C
= 2mA, V
CE
= 5V
Base-Emitter Voltage Matching (Note 11) V
BE1
-
V
BE2
⎯
1 2 mV
I
C
= 2mA, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(SAT)1
/
V
CE(SAT)2
⎯
1 2 %
I
C
= 10mA, I
B
= 1.0mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(SAT)1
/
V
BE(SAT)2
⎯
1 2 %
I
C
= 10mA, I
B
= 1.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ ⎯
4.0 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯ ⎯
8.0 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
⎯
10
kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5
⎯
8 x 10
-4
Small Signal Current Gain
h
fe
100
⎯
400
⎯
Output Admittance
h
oe
1.0
⎯
40
μS
Current Gain-Bandwidth Product
f
T
300
⎯ ⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure NF
⎯ ⎯
5.0 dB
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
⎯
35 ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= -0.5V, I
B1
= 1.0mA
Rise Time
t
r
⎯
⎯
35 ns
Storage Time
t
s
⎯
⎯
200 ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
⎯
⎯
50 ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
10. Is the ratio of one transistor compared to the other transistor.
11. V
BE1
-
V
BE2
is the absolute difference of one transistor compared to the other transistor.
P1-P3P4-P6

DMMT3904WQ-7-F

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Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT Gen Purp Trans
Lifecycle:
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