TSM500P02D
Taiwan Semiconductor
Document Number: DS_P0000114 2 Version: B15
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL
MIN TYP MAX
UNIT
Static
(Note 3)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250µA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-0.3 -0.6 -0.8 V
Gate Body Leakage V
GS
= ±10V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= -20V, V
GS
= 0V I
DSS
-- -- -1
µA
Drain-Source On-State Resistance
V
GS
= -4.5V, I
D
= -3A
R
DS(ON)
--
42 50
mΩ V
GS
= -2.5V, I
D
= -2A -- 57 65
V
GS
= -1.8V, I
D
= -1A -- 75 85
Forward Transconductance V
DS
= -10V, I
D
= -3A g
fs
-- 7 -- S
Dynamic
(Note 4)
Total Gate Charge
V
DS
= -10V, I
D
= -3.0A,
V
GS
= -4.5V
Q
g
-- 9.6 13
nC
Gate-Source Charge Q
gs
-- 1.6 2
Gate-Drain Charge Q
gd
-- 2 4
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
850 1230
pF
Output Capacitance C
oss
--
70
100
Reverse Transfer Capacitance C
rss
--
55
80
Switching
(Note 5)
Turn-On Delay Time
V
DD
= -10V,
R
GEN
= 25Ω,
I
D
= -1A, V
GS
= -4.5V,
t
d(on)
--
6 11
ns
Turn-On Rise Time t
r
--
21.6 41
Turn-Off Delay Time t
d(off)
--
51 97
Turn-Off Fall Time t
f
--
13.8 26
Source-Drain Diode
(Note 3)
Continuous Source Current
V
G
= V
D
= 0V,
Force Current
I
S
-- -- -4.7 A
Pulsed Source Current I
SM
-- -- -18.8 A
Forward On Voltage
I
S
= -1.0A, V
GS
= 0V V
SD
-- -- -1.0 V
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
