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SQ2310ES-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQ2310ES
www.vishay.com
Vishay Siliconix
S11-2111-Rev. B, 07-Nov-11
1
Document Number: 67036
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 20
R
DS(on)
() at V
GS
= 4.5 V 0.030
R
DS(on)
() at V
GS
= 2.5 V 0.034
R
DS(on)
() at V
GS
= 1.5 V 0.042
I
D
(A) 6
Configuration Single
D
G
S
N-Channel MOSFET
* Marking Code: 8Txxx
SQ2310ES*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and Halogen-free SQ2310ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current
T
C
= 25 °C
I
D
6
A
T
C
= 125 °C 3.5
Continuous Source Current (Diode Conduction) I
S
2.5
Pulsed Drain Current
a
I
DM
24
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy E
AS
5mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
2
W
T
C
= 125 °C 0.6
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
175
°C/W
Junction-to-Foot (Drain) R
thJF
75
SQ2310ES
www.vishay.com
Vishay Siliconix
S11-2111-Rev. B, 07-Nov-11
2
Document Number: 67036
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 20 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.4 0.6 1
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 20 V - - 1
μA V
GS
= 0 V V
DS
= 20 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 20 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 4.5 V V
DS
5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 5 A - 0.024 0.030
V
GS
= 4.5 V I
D
= 5 A, T
J
= 125 °C - - 0.045
V
GS
= 4.5V I
D
= 5 A, T
J
= 175 °C - - 0.054
V
GS
= 2.5 V I
D
= 4 A - 0.027 0.034
V
GS
= 1.5 V I
D
= 2 A - 0.034 0.042
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 5 A - 27 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 10 V, f = 1 MHz
- 387 485
pF Output Capacitance C
oss
- 80 100
Reverse Transfer Capacitance C
rss
-3746
Total Gate Charge
c
Q
g
V
GS
= 4.5 V V
DS
= 10 V, I
D
= 5 A
-4.58.5
nC Gate-Source Charge
c
Q
gs
-0.4-
Gate-Drain Charge
c
Q
gd
-0.7-
Gate Resistance R
g
f = 1 MHz 6 12 18
Turn-On Delay Time
c
t
d(on)
V
DD
= 10 V, R
L
= 2.5
I
D
4 A, V
GEN
= 4.5 V, R
g
= 1
-711
ns
Rise Time
c
t
r
-812
Turn-Off Delay Time
c
t
d(off)
-2132
Fall Time
c
t
f
-914
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--24A
Forward Voltage V
SD
I
F
= 5 A, V
GS
= 0 V - 0.75 1.2 V
SQ2310ES
www.vishay.com
Vishay Siliconix
S11-2111-Rev. B, 07-Nov-11
3
Document Number: 67036
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 1 2 3 4 5
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 5 V thru 2 V
V
GS
= 1.0 V
V
GS
= 1.5 V
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.4 0.8 1.2 1.6 2.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.5 V
0
3
6
9
12
15
18
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
7
14
21
28
35
0 1 2 3 4 5 6 7
g
fs
-Transconductance (S)
I
D
-Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
iss
oss
rss
P1-P3P4-P6P7-P9P10-P11

SQ2310ES-T1_GE3

Mfr. #:
Buy SQ2310ES-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 6A 2W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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