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BYV32E-200PQ

P1-P3P4-P6P7-P9P10-P11
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
BYV32E-200P
Dual ultrafast power diode
14 May 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
2. Features and benefits
•
Ultra low leakage current
•
High junction temperature up to 175 °C
•
Low on-state loss
•
Fast switching
•
Soft recovery characteristic minimizes power consuming oscillations
•
High reverse surge capability
•
High thermal cycling performance
•
Low thermal resistance
3. Applications
•
Home appliance power supply
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 200 V
I
O(AV)
average output current δ = 0.5; T
mb
≤ 149 °C; Square-ware
pulse
- - 20 A
I
FSM
non-repetitive peak
forward current
T
j(init)
= 25 °C; t
p
= 8.3 ms; SIN; per
diode; Fig. 4
- - 137 A
I
RRM
repetitive peak reverse
current
t
p
= 2 µs; δ = 0.001; per diode - - 0.2 A
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins - - 8 kV
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 7
- 18 25 ns
Static characteristics
V
F
forward voltage I
F
= 8 A; T
j
= 150 °C; Fig. 6 - 0.76 0.85 V
NXP Semiconductors
BYV32E-200P
Dual ultrafast power diode
BYV32E-200P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 14 May 2015 2 / 10
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
2 K cathode
3 A2 anode 2
1 2
mb
3
TO-220AB (SOT78)
sym125
A2A1
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYV32E-200P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4. Marking codes
Type number Marking code
BYV32E-200P BYV32E-200P
P1-P3P4-P6P7-P9P10-P11

BYV32E-200PQ

Mfr. #:
Buy BYV32E-200PQ
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Dual Ultrafast Power Diode
Lifecycle:
New from this manufacturer.
Delivery:
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