©2001 Fairchild Semiconductor Corporation HUF76633P3, HUF76633S3S Rev. B
HUF76633P3, HUF76633S3S
38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Features
• Ultra Low On-Resistance
-r
DS(ON)
= 0.035Ω, V
GS
= 10V
-r
DS(ON)
= 0.036Ω,
V
GS
= 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-220AB JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
HUF76633P3
GATE
SOURCE
DRAIN
(FLANGE
HUF76633S3S
D
G
S
PART NUMBER PACKAGE BRAND
HUF76633P3 TO-220AB 76633P
HUF76633S3S TO-263AB 76633S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76633S3ST.
HUF76633P3, HUF76633S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
DSS
100 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . .V
DGR
100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±16 V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
38
39
27
27
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
145
0.97
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet December 2001
