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FFSH2065BDN-F085

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2017
June, 2018 − Rev. 3
1 Publication Order Number:
FFSH2065BDN−F085/D
FFSH2065BDN-F085
Silicon Carbide Schottky
Diode, 650 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 49 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
www.onsemi.com
TO−247−3LD
CASE 340CH
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y&Z&3&K
FFSH
2065BDN
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH2065BDN = Specific Device Code
1
Anode
2
Cathode/
Case
3
Anode
FFSH2065BDN−F085
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 49*/49** mJ
I
F
Continuous Rectified Forward Current @ T
C
< 136°C 10*/20** A
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
650 A
T
C
= 150°C, 10 ms
570 A
I
F,SM
Non-Repetitive Forward Surge Current
T
C
= 25°C
Half-Sine Pulse, t
p
= 8.3 ms 42 A
Ptot Power Dissipation
T
C
= 25°C 65 W
T
C
= 150°C 22 W
T
J
, T
STG
Operating and Storage Temperature Range −55 to +175 °C
TO247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
* Per Leg, ** Per Device
1. E
AS
of 49 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 14 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 2.3*/1.2** °C/W
* Per Leg, ** Per Device
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted (per leg))
Symbol
Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 10 A, T
C
= 25°C − 1.38 1.7
V
I
F
= 10 A, T
C
= 125°C − 1.6 2.0
I
F
= 10 A, T
C
= 175°C − 1.72 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C − 0.5 40 mA
V
R
= 650 V, T
C
= 125°C − 1 80
V
R
= 650 V, T
C
= 175°C − 2 160
Q
C
Total Capacitive Charge V = 400 V − 25 − nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz − 421 −
pF
V
R
= 300 V, f = 100 kHz − 40 −
V
R
= 600 V, f = 100 kHz − 34 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH2065BDN−F085 FFSH2065BDN TO−247−3LD
(Pb−Free / Halogen Free)
30 Units / Tube
FFSH2065BDN−F085
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted (per leg))
700
0.0
0.2
0.4
0.6
0.8
1.0
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
0
20
40
60
80
100
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175
25 50 75 100 125 150 175
0
20
40
60
80
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
0 200 400 600650
0
10
20
30
40
Q
C
, CAPACITIVE CHARGE (nC)
V , REVERSE VOLTAGE (V)
0
0
10
20
30
40
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage
10
−9
10
−8
10
−7
10
−6
T
J
= −55
o
C
T
J
= 175
o
C
T
J
= 75
o
C
T
J
= 125
o
C
T
J
= 25
o
C
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
200 300 400 500 600 650
750 800 850
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P1-P3P4-P6P7-P7

FFSH2065BDN-F085

Mfr. #:
Buy FFSH2065BDN-F085
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 20A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
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