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PD55015-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
PD55015-E Typical performance
Doc ID 12596 Rev 3 7/25
4.1 Performance related to the PowerSO-10RF formed lead
Figure 7. Output power vs. input power Figure 8. Power gain vs. output power
Figure 9. Drain efficiency vs. output power Figure 10. Return loss vs. output power
0 0.2 0.4 0.6 0.8 1
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
500 MHz
480 MHz
520 MHz
VDD = 12..5 V
I
DQ
= 150 mA
0 2 4 6 8 1012141618
Pout, OUTPUT POWER (W)
10
12
14
16
18
Gp, POWER GAIN (dB)
500 MHz
480 MHz
520 MHz
Vdd = 12.5 V
Idq = 150 mA
0 2 4 6 8 1012141618
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, RETURN LOSS (dB)
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
Typical performance PD55015-E
8/25 Doc ID 12596 Rev 3
Figure 11. Output power vs. bias current Figure 12. Drain efficiency vs. bias current
Figure 13. Output power vs. drain voltage Figure 14. Drain efficiency vs. drain voltage
Figure 15. Output power vs. gate bias voltage
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
12
14
16
18
20
22
Pout, OUTPUT POWER (W)
520 MHz
480 MHz
500 MHz
Pin = .7 W
Vdd = 12.5 V
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
500 MHz
480 MHz
520 MHz
Pin = .7 W
Vdd = 12.5 V
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
Pout, OUTPUT POWER (W)
520 MHz
480 MHz
500 MHz
Idq = 150mA
Pin = .7 W
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
500 MHz
520 MHz
480 MHz
IDQ = 150mA
Pin = .7 W
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE BIAS VOLTAGE (V)
0
5
10
15
20
Pout, OUTPUT POWER (W)
500 MHz
520 MHz
480 MHz
V
DD
= 12.5 V
Pin = .7 W
PD55015-E Typical performance
Doc ID 12596 Rev 3 9/25
4.2 Performance related to the PowerSO-10RF straight lead
Figure 16. Output power vs. input power Figure 17. Power gain vs. output power
Figure 18. Drain efficiency vs. output power Figure 19. Return loss vs. output power
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
500 MHz
480 MHz
520 MHz
VDD = 12..5 V
I
DQ = 150 mA
0 2 4 6 8 1012141618
Pout, OUTPUT POWER (W)
10
12
14
16
18
Gp, POWER GAIN (dB)
500 MHz
480 MHz
520 MHz
Vdd = 12.5 V
Idq = 150 mA
024681012141618
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
024681012141618
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, RETURN LOSS (dB)
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
Figure 20. Output power vs. gate bias current Figure 21. Drain efficiency vs. bias current
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
12
14
16
18
20
22
Pout, OUTPUT POWER (W)
520 MHz
480 MHz
500 MHz
Pin = .5 W
Vdd = 12.5 V
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
500 MHz
480 MHz
520 MHz
Pin = .5 W
Vdd = 12.5 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

PD55015-E

Mfr. #:
Buy PD55015-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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