KSC3074YTU

©2000 Fairchild Semiconductor International Rev. A, February 2000

KSC3074

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 60 V

V

CEO

Collector-Emitter Voltage 50 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 5 A

I

B

Base Current 1 A

P

C

Collector Dissipation (T

a

=25°C) 1 W

P

C

Collector Dissipation (T

C

=25°C) 20 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10mA, I

B

= 0 50 V

I

CBO

Collector Cut-off Current V

CB

= 50V, I

E

= 0 1 µA

I

EBO

Emitter Cut-off Current V

EB

= 5V, I

C

= 0 1 µA

h

FE1

h

FE2

DC Current Gain V

CE

= 1V, I

C

= 1A

V

CE

= 1V, I

C

= 3A

70

30

240

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 3A, I

B

= 0.15A 0.5 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 3A, I

B

= 0.15A 0.9 1.2 V

f

T

Current Gain Bandwidth Product V

CE

= 4V, I

C

= 1A 120 MHz

C

ob

Output Capacitance V

CB

= 10V, f = 1MHz 80 pF

t

ON

Turn ON Time V

CC

= 30V, I

C

= 3A

I

B1

= - I

B2

=0.15A

R

L

= 10Ω

0.1 µs

t

STG

Storage Time 1 µs

t

F

Fall Time 0.1 µs

Classification O Y

h

FE1

70 ~ 140 120 ~ 240

KSC3074

High Power Switching

• Complement to KSA1244

1. Base 2. Collector 3. Emitter

I-PACK

1

©2000 Fairchild Semiconductor International

KSC3074

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter on Voltage

Figure 5. Safe Operating Area Figure 6. Power Derating

012345678

0

1

2

3

4

5

6

7

8

I

B

= 100mA

I

B

= 90mA

I

B

= 80mA

I

B

= 70mA

I

B

= 60mA

I

B

= 50mA

I

B

= 40mA

I

B

= 30mA

I

B

= 20mA

I

B

= 10mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1

10

100

1000

V

CE

= 1V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 20 I

B

V

CE

(sat)

V

BE

(sat)

I

C

[A], COLLECTOR CURRENT

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

V

CE

= 1V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

0.1 1 10 100

0.01

0.1

1

10

V

CEO

MAX.

1ms

10ms

DC

I

C

MAX. (Pulse)

I

C

MAX. (DC)

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

4

8

12

16

20

24

28

32

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

6.60

±0.20

0.76

±0.10

MAX0.96

2.30TYP

[2.30±0.20]

2.30TYP

[2.30±0.20]

0.60

±0.20

0.80

±0.10

1.80

±0.20

9.30

±0.30

16.10

±0.30

6.10

±0.20

0.70

±0.20

5.34

±0.20

0.50

±0.10

0.50

±0.10

2.30

±0.20

(0.50) (0.50)(4.34)

I-PAK

Package Demensions

©2000 Fairchild Semiconductor International Rev. A, February 2000

KSC3074

Dimensions in Millimeters

KSC3074YTU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Sil

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet