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NSBC143ZPDP6T5G

P1-P3P4-P6P7-P9P10-P10
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
www.onsemi.com
30
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5333DW1, NSBC143ZPDXV6
−55°C
150°C
Figure 46. V
CE(sat)
versus I
C
Figure 47. DC Current Gain
Figure 48. Output Capacitance Figure 49. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 50. Input Voltage versus Output
Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
1
0.1
0.01
1 10 100
1000
1 10 100
−55°C
150°C
25°C
3.2
25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
25°C
−55°C
150°C
10
1
0.1
50403020100
100
10
2.8
2.4
2
1.6
1.2
0.8
0.4
0
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
www.onsemi.com
31
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5333DW1, NSBC143ZPDXV6
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
10
010 20304050
9
8
7
6
5
4
3
2
1
0
75°C
25°C
−25°C
Figure 51. V
CE(sat)
vs. I
C
Figure 52. DC Current Gain
Figure 53. Output Capacitance Figure 54. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 55. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
I
C
, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
6543210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
75°C
25°C
−25°C
75°C
25°C
−25°C
75°C
25°C
−25°C
0.01
0.01
0.1
30
I
C
/I
B
= 10
V
CE
= 10 V
V
O
= 5 V
V
O
= 0.2 V
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
www.onsemi.com
32
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC143ZPDP6
−55°C
150°C
Figure 56. V
CE(sat)
versus I
C
Figure 57. DC Current Gain
Figure 58. Output Capacitance Figure 59. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 60. Input Voltage versus Output
Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
1
0.1
0.01
110 50
1000
1 10 100
−55°C
150°C
25°C
2.4
25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
25°C
−55°C
150°C
100
50403020100
403020
100
10
1
0.1
2
1.6
1.2
0.8
0.4
0
10
1
0.1
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P10

NSBC143ZPDP6T5G

Mfr. #:
Buy NSBC143ZPDP6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased BRT COMPLEMENTARY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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