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NSVMUN5333DW1T3G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 5
27 Publication Order Number:
DTC143ZP/D
MUN5333DW1,
NSBC143ZPDXV6,
NSBC143ZPDP6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Symbol Max Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
30 Vdc
Input Reverse Voltage V
IN(rev)
5 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
†
MUN5333DW1T1G,
NSVMUN5333DW1T1G*
SOT−363 3,000/Tape & Reel
NSVMUN5333DW1T3G* SOT−363 10,000/Tape & Reel
NSBC143ZPDXV6T1G
NSVBC143ZPDXV6T1G*
SOT−563 4,000/Tape & Reel
NSVBC143ZPDXV6T5G* SOT−563 8,000/Tape & Reel
NSBC143ZPDP6T5G SOT−963 8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
MARKING DIAGRAMS
PIN CONNECTIONS
33/Y = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SOT−363
CASE 419B−02
SOT−563
CASE 463A
Q
1
Q
2
(1)(2)(3)
(6)(5)(4)
R
1
R
2
R
2
R
1
SOT−963
CASE 527AD
M
1
Y
33 MG
G
1
6
33 MG
1
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
www.onsemi.com
28
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5333DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 19)
(Note 20)
Derate above 25°C (Note 19)
(Note 20)
P
D
187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 19)
Junction to Ambient (Note 20)
R
q
JA
670
490
°C/W
MUN5333DW1 (SOT−363) BOTH JUNCTION HEATED (Note 21)
Total Device Dissipation
T
A
= 25°C (Note 19)
(Note 20)
Derate above 25°C (Note 19)
(Note 20)
P
D
250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 19)
(Note 20)
R
q
JA
493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 19)
(Note 20)
R
q
JL
188
208
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
NSBC143ZPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 19)
Derate above 25°C (Note 19)
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 19)
R
q
JA
350
°C/W
NSBC143ZPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 21)
Total Device Dissipation
T
A
= 25°C (Note 19)
Derate above 25°C (Note 19)
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 19)
R
q
JA
250
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
NSBC143ZPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 22)
(Note 23)
Derate above 25°C (Note 22)
(Note 23)
P
D
231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 22)
(Note 23)
R
q
JA
540
464
°C/W
NSBC143ZPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 21)
Total Device Dissipation
T
A
= 25°C (Note 22)
(Note 23)
Derate above 25°C (Note 22)
(Note 23)
P
D
339
408
2.7
3.3
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 22)
(Note 23)
R
q
JA
369
306
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
19.FR−4 @ Minimum Pad.
20.FR−4 @ 1.0 × 1.0 Inch Pad.
21.Both junction heated values assume total power is sum of two equally powered channels.
22.FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
23.FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
www.onsemi.com
29
ELECTRICAL CHARACTERISTICS (T
A
=25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
=50V, I
E
=0)
I
CBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(V
CE
=50V, I
B
=0)
I
CEO
− − 500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
=0)
I
EBO
− − 0.18
mAdc
Collector-Base Breakdown Voltage
(I
C
=10mA, I
E
=0)
V
(BR)CBO
50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 24)
(I
C
= 2.0 mA, I
B
=0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 24)
(I
C
= 5.0 mA, V
CE
=10V)
h
FE
80 200 −
Collector-Emitter Saturation Voltage (Note 24)
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
− − 0.25
V
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100 mA) (NPN)
(V
CE
= 5.0 V, I
C
= 100 mA) (PNP)
V
i(off)
−
−
0.6
0.67
−
−
Vdc
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (PNP)
V
i(on)
−
−
0.9
0.91
−
−
Vdc
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 3.3 4.7 6.1
kW
Resistor Ratio R
1
/R
2
0.08 0.1 0.14
24.Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
Figure 45. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
P
D
, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
350
400
(3)
P1-P3P4-P6P7-P9P10-P10

NSVMUN5333DW1T3G

Mfr. #:
Buy NSVMUN5333DW1T3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL
Lifecycle:
New from this manufacturer.
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