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CSD06060G

P1-P3P4-P6
1
Subject to change without notice.
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R
CSD06060–Silicon Carbide Schottky Diode
Zero recovery
®
RectifieR
V
RRM
= 600 V
I
F(AVG)
= 6 A
Q
c
= 17 nC
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCP
out
:600W-1200W
• MotorDrives
-TypicalPower:2HP-3HP 
Package
TO-263-2 TO-220-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F(AVG)
AverageForwardCurrent
6
10
A
T
C
=150˚C,DC
T
C
=125˚C,DC
I
F(PEAK)
PeakForwardCurrent 15 A T
C
=125˚C,T
REP
<1mS,Duty=0.5
I
FRM
RepetitivePeakForwardSurgeCurrent
32
22
A
T
C
=25˚C,t
P
=10ms,HalfSineWave
T
C
=125˚C,t
P
=10ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 64 A T
C
=25˚C,t
p
=1.5mS,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 200 A T
C
=25˚C,t
P
= 10 µs,Pulse
P
tot
PowerDissipation
83.3
27.8
W
T
C
=25˚C
T
C
=125˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55 to
+175
˚C
TO-220MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
PIN1
PIN2
CASE
Part Number Package Marking
CSD06060A TO-220-2 CSD06060
CSD06060G TO-263-2 CSD06060
2 CSD06060 Rev. R
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
ForwardVoltage
1.6
1.9
1.8
2.4
V
I
F
= 6 A T
J
=25°C
I
F
= 6 A T
J
=175°C
I
R
ReverseCurrent
50
100
200
1000
μA
V
R
= 600 V T
J
=25°C
V
R
= 600 V T
J
=175°C
Q
C
TotalCapacitiveCharge 17 nC
V
R
=600V,I
F
= 6A
di/dt = 500 A/μs
T
J
=25°C
C TotalCapacitance
340
40
30
pF
V
R
=0V,T
J
=25°C,f=1MHz
V
R
=200V,T
J
=25˚C,f=1MHz
V
R
=400V,T
J
=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
ThermalResistancefromJunctiontoCase 1.8 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
V
F
Forward Voltage (V
)
I
F
Forward Current (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0 0.51.01.52.02.53.54.0
V
R
Reverse Voltage (V
)
I
R
Reverse Current (μA)
200
180
160
140
120
100
80
60
40
20
0
0 200400600800
3 CSD06060 Rev. R
Figure3.CurrentDerating Figure4.Capacitancevs.ReverseVoltage
Figure5.TransientThermalImpedance
Typical Performance
70
60
50
40
30
20
10
0
25 5075100125150175200
I
F(PEAK)
Peak Forward Current (A)
10%Duty
30%Duty
50%Duty
70%Duty
DC
Current Derating
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
25 50 75 100 125 150 175 200
Case Temperature
Peak Forward Current
DC 70% Duty 50% Duty 30% Duty 10% Duty
10%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
T
C
Case Temperature (
°
C
)
*Frequency>1KHz
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Tim e (s)
Zth (°C/W)
250
200
150
100
50
0
V
R
Reverse Voltage (V
)
C
Capacitance (pF)
1 10 100 1000
P1-P3P4-P6

CSD06060G

Mfr. #:
Buy CSD06060G
Manufacturer:
N/A
Description:
DIODE SCHOTTKY 600V 10A TO263-2
Lifecycle:
New from this manufacturer.
Delivery:
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