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LTC6992HDCB-2#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PBRN113E_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 March 2007 7 of 17
NXP Semiconductors
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
FR4 PCB, standard footprint
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT54 (SC-43A/TO-92); typical values
006aab002
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1
006aab003
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1
PBRN113E_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 March 2007 8 of 17
NXP Semiconductors
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V;
I
E
=0A
- - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
=30V;
I
B
=0A
- - 0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V;
I
C
=0A
--4mA
h
FE
DC current gain V
CE
=5V;
I
C
=50mA
40 75 -
V
CE
=5V;
I
C
= 300 mA
[1]
180 300 -
V
CE
=5V;
I
C
= 600 mA
[1]
250 400 -
V
CE
=5V;
I
C
= 800 mA
[1]
270 420 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA;
I
B
= 2.5 mA
- 2535mV
I
C
= 200 mA;
I
B
=10mA
- 6085mV
I
C
= 500 mA;
I
B
=10mA
[1]
- 160 220 mV
I
C
= 600 mA;
I
B
=6mA
[1]
- 320 550 mV
I
C
= 800 mA;
I
B
=8mA
[1]
- 0.68 1.15 V
V
I(off)
off-state input voltage V
CE
=5V;
I
C
= 100 µA
0.6 1 1.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V;
I
C
=20mA
1 1.3 1.8 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
-7-pF
PBRN113E_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 March 2007 9 of 17
NXP Semiconductors
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 7. DC current gain as a function of collector
current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=50
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
= 100
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab004
I
C
(mA)
10
−1
10
3
10
2
110
1
10
10
2
10
3
h
FE
10
−1
(1)
(2)
(3)
006aab005
I
C
(mA)
10 10
3
10
2
10
−1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
I
C
(mA)
10 10
3
10
2
006aab006
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
I
C
(mA)
10 10
3
10
2
006aab007
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

LTC6992HDCB-2#TRPBF

Mfr. #:
Buy LTC6992HDCB-2#TRPBF
Manufacturer:
Analog Devices Inc.
Description:
Switching Controllers PWM with 5% to 95% Pulse Width Control
Lifecycle:
New from this manufacturer.
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