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BLS6G2933P-200,117

P1-P3P4-P6P7-P9P10-P11
BLS6G2933P-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 01 — 28 May 2010 4 of 11
NXP Semiconductors
BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
7. Application information
7.1 Ruggedness in class-AB operation
The BLS6G2933P-200 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
DS
=32V;
I
Dq
=100mA; P
L
= 215 W pulsed; t
p
= 300 μs; δ = 10 %.
Table 7. Application information
RF performance in common source class-AB circuit; T
h
=25
°
C; t
p
=300
μ
s;
δ
=10 %;
I
Dq
= 100 mA; P
L
= 215 W; Z
th
= <tbd> K/W; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f frequency 2.9 - 3.3 GHz
V
CC
supply voltage - - 32 V
t
p
pulse duration - - 300 μs
δ duty cycle - 10 - %
P
L(1dB)
output power at 1 dB gain compression - 220 - W
G
p
power gain 10 11 - dB
η
D
drain efficiency 40 45 - %
P
droop(pulse)
pulse droop power - 0.1 0.3 dB
Z
i
input impedance - 50 - Ω
Z
o
output impedance - 50 - Ω
IRL input return loss - −10 - dB
BLS6G2933P-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 01 — 28 May 2010 5 of 11
NXP Semiconductors
BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
8. Test information
The striplines are on a Rogers RO6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm.
See Table 8
for list of components. The drawing is not to scale.
Fig 2. Component layout
Table 8. List of components
See Figure 2
for component layout.
Component Description Value Remarks
C1, C8 multilayer ceramic chip capacitor 47 μFTDK
C2, C7, C11, C15 multilayer ceramic chip capacitor 100 pF ATC100B
C3, C4, C5, C6, C9, C10, C13, C14 multilayer ceramic chip capacitor 33 pF ATC100A
C12 electrolytic capacitor 680 μF
C16 electrolytic capacitor 68 μF
R1, R2 SMD resistor 33 Ω thin film
001aak230
V
GG
V
DD
C1
C2
R1
R2
C7
C8
C15
C14
C9
C10
C11
C13
C3
C4
C6
C5
C16
C12
BLS6G2933P-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 01 — 28 May 2010 6 of 11
NXP Semiconductors
BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
9. Package information
Printed-Circuit Board (PCB) thickness is 0.64 mm.
Sweat bonding is approximately 25 μm.
Fig 3. Preliminary package outline
001aak20
3
∅2.7 (4x)
B-B
31.6
1.45 (2x)
1.25
A-A
A-A
35.8
∅1.5
1
A-A
0.2
1.25
1.451.25
3.2
B-BB-B
1
2
10.5
25.4 33.4 35.4
11.15
45.7 ±0.05
0.985 (2x)
50.8
−0.1
0
−0.1
0
11.4 ±0.05
7.5
11.35
−0.2
0
9.5 2.5 (6x)2.2 (2x)
2 (2x)
+0.03
+0.13
10.3
R1.5
4.7
0.50
P1-P3P4-P6P7-P9P10-P11

BLS6G2933P-200,117

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Description:
Trans MOSFET 60V 66A 6-Pin (Alt: BLS6G2933P-200,117)
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