DMG7430LFG
Document number: DS35497 Rev. 5 - 2
5 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMG7430LFG
ADVANCE INFORMATION
POWERDI is a registered trademark of Diodes Incorporated
0
0.01
0.02
0.03
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 10 On-Resistance Variation with Temperature
J
°
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
V = 4.5V
I= 10A
GS
D
V=V
I= 20A
GS
D
10
0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
A
E
ES
LD V
L
A
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.12 Diode Forward Voltage vs. Current
I, S
E
E
(V)
S
T= 25°C
A
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000
0 5 10 15 20 25 30
, J
I
A
A
I
A
E (p
)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0102030405060708090100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 14 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
I, D
AIN LEAKA
E
EN
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30
V
A
E
ES
LD V
L
A
E (V)
GS
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 15 Gate Charge
V = 15V
I= A
DS
D
12
