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LT6411CUD#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
LT6411
4
6411f
ELECTRICAL CHARACTERISTICS
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
CC
= 5V, V
EE
= 0V, A
V
= 2, No R
LOAD
, V
EN
= 0.4V, V
DGND
= 0V,
unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
30MHz Signal
HD Second/Third Harmonic Distortion 2V
P-P
Differential
2V
P-P
Differential, R
L
= 200Ω Differential
–77
–64
dBc
dBc
IMD3
30M
Third-Order IMD 2V
P-P
Differential Composite, f1 = 29.5MHz,
Differential, f2 = 30.5MHz
–87 dBc
2V
P-P
Differential Composite, f1 = 29.5MHz,
f2 = 30.5MHz, R
L
= 200Ω Differential
–75 dBc
OIP3
30M
Output Third-Order Intercept Differential, f1 = 29.5MHz, f2 = 30.5MHz (Note 10) 46.5 dBm
NF Noise Figure Single Ended 24.6 dB
e
n30M
Input Referred Noise Voltage Density 7.6 nV/√Hz
P1dB 1dB Compression Point (Note 10) 19.5 dBm
70MHz Signal
HD Second/Third Harmonic Distortion 2V
P-P
Differential
2V
P-P
Differential, R
L
= 200Ω Differential
–63
–52
dBc
dBc
IMD3
70M
Third-Order IMD 2V
P-P
Differential Composite, f1 = 69.5MHz,
Differential, f2 = 70.5MHz
–83 dBc
2V
P-P
Differential Composite, f1 = 69.5MHz,
f2 = 70.5MHz, R
L
= 200Ω Differential
–64 dBc
OIP3
70M
Output Third-Order Intercept Differential, f1 = 69.5MHz, f2 = 70.5MHz (Note 10) 44.5 dBm
NF Noise Figure Single Ended 24.7 dB
e
n70M
Input Referred Noise Voltage Density 7.7 nV/√Hz
P1dB 1dB Compression Point (Note 10) 19.5 dBm
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: This parameter is guaranteed to meet specifi ed performance
through design and characterization. It is not production tested.
Note 3: As long as output current and junction temperature are kept
below the Absolute Maximum Ratings, no damage to the part will occur.
Depending on the supply voltage, a heat sink may be required.
Note 4: The LT6411C is guaranteed functional over the operating
temperature range of –40°C to 85°C.
Note 5: The LT6411C is guaranteed to meet specifi ed performance from
0°C to 70°C. The LT6411C is designed, characterized and expected to
meet specifi ed performance from –40°C and 85°C but is not tested or
QA sampled at these temperatures. The LT6411I is guaranteed to meet
specifi ed performance from –40°C to 85°C.
Note 6: The two supply voltage settings for power supply rejection
are shifted from the typical ±V
S
points for ease of testing. The fi rst
measurement is taken at V
CC
= 3V, V
EE
= –1.5V to provide the required 3V
headroom for the enable circuitry to function with EN, DGND and all inputs
connected to 0V. The second measurement is taken at V
CC
= 8V, V
EE
= –4V.
Note 7: Full power bandwidth is calculated from the slew rate:
FPBW = SR/(π • V
P-P
)
Note 8: Differential gain and phase are measured using a Tektronix
TSG120YC/NTSC signal generator and a Tektronix 1780R video
measurement set. The resolution of this equipment is better than 0.05%
and 0.05°. Ten identical amplifi er stages were cascaded giving an effective
resolution of better than 0.005% and 0.005°.
Note 9: Slew rate is 100% production tested on channel 1. Slew rate of
channel 2 is guaranteed through design and characterization.
Note 10: Since the LT6411 is a feedback amplifi er with low output
impedance, a resistive load is not required when driving an ADC.
Therefore, typical output power is very small. In order to compare the
LT6411 with typical g
m
amplifi ers that require 50Ω output loading, the
LT6411 output voltage swing driving an ADC is converted to OIP3 and
P1dB as if it were driving a 50Ω load.
LT6411
5
6411f
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current per Amplifi er
vs Temperature
Supply Current per Ampifi er
vs Supply Voltage
Supply Current per Amplifi er
vs EN Pin Voltage
Output Offset Voltage
vs Temperature
Positive Input Bias Current
vs Input Voltage
EN Pin Current vs EN Pin Voltage
Output Voltage vs Input Voltage
Output Voltage Swing vs I
LOAD
(Output High)
Output Voltage Swing vs I
LOAD
(Output Low)
EN PIN VOLTAGE (V)
0
EN PIN CURRENT (µA)
0
–20
–40
–60
–80
–100
–120
–140
6411 G06
2
5
1
34
V
S
= ±5V
V
DGND
= 0V
T
A
= –55°C
T
A
= 25°C
T
A
= 125°C
SOURCE CURRENT (mA)
0
OUTPUT VOLTAGE (V)
5
4
3
2
1
0
40
6411 G08
10
20
30
10050 60 70 80 90
V
S
= ±5V
A
V
= 2
V
IN
= 2V
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
040
10
20
30
10050 60 70 80 90
SINK CURRENT (mA)
OUTPUT VOLTAGE (V)
0
–1
–2
–3
–4
–5
6411 G09
V
S
= ±5V
A
V
= 2
V
IN
= –2V
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
All measurements are per amplifi er with single-ended outputs unless otherwise noted.
–55 –15
25
45
TEMPERATURE (°C)
125
6411 G01
–35 5
65
85
105
12
V
EN
= 0V
V
EN
= 0.4V
10
8
6
4
SUPPLY CURRENT (mA)
2
0
V
S
= ±5V
R
L
= ∞
V
IN
+
, V
IN
–
= 0V
6411 G02
12
10
8
6
SUPPLY CURRENT (mA)
4
2
0
0123456
TOTAL SUPPLY VOLTAGE (V)
7 8 9 10 11 12
V
CC
= –V
EE
V
EN
, V
DGND
, V
IN
+
, V
IN
–
= 0V
T
A
= 25°C
6411 G03
12
SUPPLY CURRENT (mA)
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0
EN PIN VOLTAGE (V)
2.5 3.0 3.5 4.0
T
A
= –55°C
T
A
= 25°C
T
A
= 125°C
V
S
= ±5V
V
DGND
= 0V
V
IN
+
, V
IN
–
= 0V
TEMPERATURE (°C)
OFFSET VOLTAGE (mV)
6411 G04
20
15
10
5
0
–5
–10
–15
–20
–55 –15
25
45 125
–35 5
65
85
105
V
S
= ±5V
V
IN
= 0V
A
V
= 2
INPUT VOLTAGE (V)
–2.5
IN
+
BIAS CURRENT (µA)
–20
0
1.5
6411 G05
–40
–60
–1.5
–0.5
0.5
2.5
20
V
S
= ±5V
A
V
= 2
T
A
= –55°C
T
A
= 25°C
T
A
= 125°C
6411 G07
INPUT VOLTAGE (V)
–4.5
OUTPUT VOLTAGE (V)
5
4
3
2
1
0
–1
–2
–3
–4
–5
–2.5
–0.5
0.5 4.5
–3.5 –1.5
1.5
2.5
3.5
T
A
= 25°C
T
A
= –55°C
V
S
= ±5V
R
L
= 1k
A
V
= 1
T
A
= 125°C
LT6411
6
6411f
Input Noise Spectral Density
Positive Input Impedance
vs Frequency
PSRR vs Frequency
Frequency Response
vs Gain Confi guration
Gain Flatness vs Frequency
Frequency Response with
Capacitive Loads
Harmonic Distortion vs Frequency,
Differential Input
Harmonic Distortion vs Amplitude,
30MHz, Differential Input
Harmonic Distortion vs Load,
30MHz, Differential Input
TYPICAL PERFORMANCE CHARACTERISTICS
All measurements are per amplifi er with single-ended outputs unless otherwise noted.
6553 G10
FREQUENCY (kHz)
0.001 0.01 1 10 1000.1
1000
100
10
1
i
n
INPUT NOISE (nV/√Hz OR pA/√Hz)
V
S
= ±5V
A
V
= 2
T
A
= 25°C
e
n
6411 G11
FREQUENCY (MHz)
0.01 0.1
INPUT IMPEDANCE (kΩ)
10 100 10001
1000
100
10
1
0.1
V
S
= ±5V
V
IN
= 0V
T
A
= 25°C
6411 G12
FREQUENCY (MHz)
REJECTION RATIO (dB)
0.001 0.01 1 10 1000.1
70
60
50
40
30
20
10
0
V
S
= ±5V
A
V
= 2
T
A
= 25°C
–PSRR
+PSRR
±PSRR
FREQUENCY (MHz)
–3
GAIN (dB)
0
3
6
9
0.1 10 100 1000
6411 G13
–6
1
A
V
= 2, V
OUT
= 200mV
P-P
A
V
= 1, A
V
= –1,V
OUT
= 200mV
P-P
A
V
= 2, V
OUT
= 2V
P-P
A
V
= 1, V
OUT
= 2V
P-P
A
V
= –1, V
OUT
= 2V
P-P
V
S
= ±5V
R
L
= 150Ω
T
A
= 25°C
FREQUENCY (MHz)
5.8
NORMALIZED GAIN (dB)
6.4
6.5
5.7
5.6
6.3
6.0
6.2
6.1
5.9
0.1 10 100 1000
6411 G14
5.5
1
CHANNEL 1
CHANNEL 2
V
S
= ±5V
A
V
= 2
V
OUT
= 200mV
P-P
R
L
= 150Ω
T
A
= 25°C
FREQUENCY (MHz)
AMPLITUDE (dB)
18
16
14
12
10
8
6
4
2
0
–2
–4
–6
6553 G15
0.1 1 10 100 1000
C
L
= 12pF
C
L
= 6.8pF
C
L
= 2.2pF
V
S
= ±5V
A
V
= 2
V
OUT
= 2V
P-P
R
L
= 150Ω
T
A
= 25°C
FREQUENCY (MHz)
1
–100
DISTORTION (dBc)
–80
–60
–40
–20
10 100
6411 G16
0
V
OUT
= 2V
P-P
, DIFFERENTIAL
A
V
= 2, V
CC
= 5V
V
EE
= 0V, V
CM
= 1.6V
DIFFERENTIAL R
LOAD
T
A
= 25°C
–90
–70
–50
–30
–10
HD3, R
L
= 200Ω
HD3, R
L
= ∞
HD2, R
L
= ∞
HD2, R
L
= 200Ω
DIFFERENTIAL OUTPUT AMPLITUDE (V
P-P
)
0.4
–100
DISTORTION (dBc)
–90
–70
–60
–50
0
–30
0.8
1.2
1.4
6411 G17
–80
–20
–10
–40
0.6 1.0
1.6
HD3
HD2
1.8
2.0
A
V
= 2, V
CC
= 5V
V
EE
= 0V, V
CM
= 1.6V
R
L
= ∞
T
A
= 25°C
DIFFERENTIAL R
LOAD
(Ω)
0
DISTORTION (dBc)
–40
–20
0
800
1011 G06
–60
–80
–50
–30
–10
–70
–90
–100
200100
400300
600
HD3
HD2
700 900
500
1000
V
OUT
= 2V
P-P
, DIFFERENTIAL
A
V
= 2, V
CC
= 5V
V
EE
= 0V, V
CM
= 1.6V
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

LT6411CUD#TRPBF

Mfr. #:
Buy LT6411CUD#TRPBF
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers 650MHz Diff ADC Drvr/2x Sel Gain Amp
Lifecycle:
New from this manufacturer.
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