SiSA26DN-T1-GE3 Datasheet SiSA26DN-T1-GE3 | P1-P3

SiSA26DN

www.vishay.com

Vishay Siliconix

S17-0340-Rev. A, 06-Mar-17

1

Document Number: 67904

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 25 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• Optimized Q

g

, Q

gd

, and Q

gd

/Q

gs

ratio reduces

switching related power loss

• 100 % R

g

and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• High power density DC/DC

• Synchronous buck converter

• Load switching

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 81 °C/W.

g. T

C

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) 25

R

DS(on)

max. () at V

GS

= 10 V 0.00265

R

DS(on)

max. () at V

GS

= 4.5 V 0.00390

Q

g

typ. (nC) 13.2

I

D

(A) 60

a, g

Configuration Single

PowerPAK

®

1212-8 Single

Top View

1

3.3 mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package PowerPAK 1212-8 Single

Lead (Pb)-free and halogen-free SiSA26DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

25

V

Gate-source voltage V

GS

+16 / -12

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

60

a

A

T

C

= 70 °C 60

a

T

A

= 25 °C 29.1

b, c

T

A

= 70 °C 23.3

b, c

Pulsed drain current (t = 100 μs) I

DM

150

Continuous source-drain diode current

T

C

= 25 °C

I

S

35.4

T

A

= 25 °C 3.2

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

25

Single pulse avalanche energy E

AS

31.2 mJ

Maximum power dissipation

T

C

= 25 °C

I

P

39

W

T

C

= 70 °C 25

T

A

= 25 °C 3.6

b, c

T

A

= 70 °C 2.3

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

c

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b

t  10 s R

thJA

26 34

°C/W

Maximum junction-to-case (drain) Steady state R

thJF

2.5 3.2

SiSA26DN

www.vishay.com

Vishay Siliconix

S17-0340-Rev. A, 06-Mar-17

2

Document Number: 67904

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 25 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= 10 mA - 19 -

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

I

D

= 250 μA - -4.5 -

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1 - 2.5 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +16 / -12 V - - 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 25 V, V

GS

= 0 V - - 1

μA

V

DS

= 25 V, V

GS

= 0 V, T

J

= 70 °C - - 15

On-state drain current

a

I

D(on)

V

DS

 10 V, V

GS

= 10 V 40 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A - 0.00215 0.00265



V

GS

= 4.5 V, I

D

= 10 A - 0.00315 0.00390

Forward transconductance

a

g

fs

V

DS

= 15 V, I

D

= 15 A - 88 - S

Dynamic

b

Input capacitance C

iss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

- 2247 -

pFOutput capacitance C

oss

- 730 -

Reverse transfer capacitance C

rss

- 105 -

Total gate charge Q

g

V

DS

= 10 V, V

GS

= 10 V, I

D

= 10 A - 29 44

nC

V

DS

= 10 V, V

GS

= 4.5 V, I

D

=10 A

- 13.2 20

Gate-source charge Q

gs

-5.4-

Gate-drain charge Q

gd

-3.2-

Gate resistance R

g

f = 1 MHz 0.2 0.8 1.5 

Turn-on delay time t

d(on)

V

DD

= 10 V, R

L

= 1 , I

D

 10 A,

V

GEN

= 10 V, R

g

= 1 

-918

ns

Rise time t

r

-2346

Turn-off delay time t

d(off)

-1632

Fall time t

f

-816

Turn-on delay time t

d(on)

V

DD

= 10 V, R

L

= 1 , I

D

 10 A,

V

GEN

= 4.5 V, R

g

= 1 

-1734

Rise time t

r

-4896

Turn-off delay time t

d(off)

-1326

Fall time t

f

-1326

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - 35.4

A

Pulse diode forward current I

SM

- - 150

Body diode voltage V

SD

I

S

= 5 A, V

GS

= 0 V - 0.75 1.1 V

Body diode reverse recovery time t

rr

I

F

= 10 A, dI/dt = 100 A/μs, T

J

= 25 °C

-2958ns

Body diode reverse recovery charge Q

rr

-1632nC

Reverse recovery fall time t

a

-12-

ns

Reverse recovery rise time t

b

-17-

SiSA26DN

www.vishay.com

Vishay Siliconix

S17-0340-Rev. A, 06-Mar-17

3

Document Number: 67904

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

30

60

90

120

150

00.511.522.5

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 3 V

V

GS

= 2 V

10

100

1000

10000

0

0.001

0.002

0.003

0.004

0.005

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 6 12 18 24 30

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 5 V, 10 V, 15 V

I

D

= 10 A

10

100

1000

10000

0

30

60

90

120

150

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

500

1000

1500

2000

2500

0 5 10 15 20 25

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.7

0.9

1.1

1.3

1.5

1.7

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 15 A

V

GS

= 10 V

V

GS

= 4.5 V

SiSA26DN-T1-GE3

SiSA26DN-T1-GE3

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