AFT23S160W02SR3 AFT23S160W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
V
DD
= 28 Vdc, I
DQ
= 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2300 3.05 - j9.21 3.18 + j8.65 2.49 - j5.63 18.0 53.4 220 53.3 -11
2350 4.59 - j10.1 4.32 + j9.21 2.59 - j6.01 17.9 53.3 215 52.1 -11
2400 7.50 - j11.0 6.42 + j10.4 2.63 - j6.16 18.0 53.2 208 51.0 -12
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2300 3.05 - j9.21 3.21 + j9.07 2.46 - j5.99 15.7 54.2 264 53.7 -17
2350 4.59 - j10.1 4.52 + j9.79 2.64 - j6.20 15.8 54.1 257 53.2 -17
2400 7.50 - j11.0 6.97 + j11.1 2.79 - j6.34 16.0 54.0 252 52.8 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Load Pull Performance — Maximum Power Tuning
V
DD
= 28 Vdc, I
DQ
= 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Drain Efficiency
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2300 3.05 - j9.21 3.12 + j8.82 3.76 - j3.36 20.1 52.0 158 61.8 -17
2350 4.59 - j10.1 4.25 + j9.42 3.59 - j3.23 20.1 51.6 145 60.7 -18
2400 7.50 - j11.0 6.33 + j10.6 3.21 - j3.60 20.1 51.8 151 60.2 -17
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Drain Efficiency
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2300 3.05 - j9.21 3.12 + j9.19 3.83 - j3.50 18.0 52.8 189 63.5 -25
2350 4.59 - j10.1 4.42 + j9.93 3.59 - j3.43 18.1 52.5 180 62.5 -26
2400 7.50 - j11.0 6.85 + j11.3 3.33 - j3.72 18.0 52.7 186 62.1 -25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
