2N7002E-T1-GE3 Datasheet 2N7002E-T1-E3, 2N7002E-T1-GE3 | P1-P3

Vishay Siliconix

2N7002E

Document Number: 70860

S11-0183-Rev. F, 07-Feb-11

www.vishay.com

1

N-Channel 60 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low On-Resistance: 3 

• Low Threshold: 2 V (typ.)

• Low Input Capacitance: 25 pF

• Fast Switching Speed: 7.5 ns

• Low Input and Output Leakage

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

• Low Offset Voltage

• Low-Voltage Operation

• Easily Driven Without Buffer

• High-Speed Circuits

• Low Error Voltage

APPLICATIONS

• Direct Logic-Level Interface: TTL/CMOS

• Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

• Battery Operated Systems

• Solid-State Relays

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(mA)

60

3 at V

GS

= 10 V

240

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Marking Code: 7E

Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)

2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

A

= 25 °C

I

D

240

mA

T

A

= 70 °C

190

Pulsed Drain Current

a

I

DM

1300

Power Dissipation

T

A

= 25 °C

P

D

0.35

W

T

A

= 70 °C

0.22

Thermal Resistance, Junction-to-Ambient

R

thJA

357 °C/W

Operating Junction and Storage Temperature Range

T

J,

T

stg

- 55 to 150 °C

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Document Number: 70860

S11-0183-Rev. F, 07-Feb-11

Vishay Siliconix

2N7002E

Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: pulse width  300 µs duty cycle  2 %.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions

Limits

Unit Min. Typ.

a

Max.

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 10 µA

60 68

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

122.5

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 15 V

± 10 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 60 V, V

GS

= 0 V

1

µA

V

DS

= 60 V, V

GS

= 0 V , T

J

= 125 °C

500

On-State Drain Current

b

I

D(on)

V

GS

= 10 V, V

DS

= 7.5 V

800 1300

mA

V

GS

= 4.5 V, V

DS

= 10 V

500 700

Drain-Source On-Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 250 mA

1.2 3



V

GS

= 4.5 V, I

D

= 200 mA

1.8 4

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 200 mA

600 mS

Diode Forward Voltage

V

SD

I

S

= 200 mA, V

GS

= 0 V

0.85 1.2 V

Dynamic

a

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 4.5 V

I

D

 250 mA

0.4 0.6

nCGate-Source Charge

Q

gs

0.06

Gate-Drain Charge

Q

gd

0.06

Input Capacitance

C

iss

V

DS

= 5 V, V

GS

= 0 V, f = 1 MHz

21

pFOutput Capacitance

C

oss

7

Reverse Transfer Capacitance

C

rss

2.5

Switching

a, c

Tur n - O n T i m e

t

d(on)

V

DD

= 10 V, R

L

= 40 

I

D

 250 mA, V

GEN

= 10 V, R

g

= 10 

13 20

ns

Turn-Off Time

t

d(off)

18 25

Document Number: 70860

S11-0183-Rev. F, 07-Feb-11

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Vishay Siliconix

2N7002E

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Gate-Source Voltage

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

012345

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V, 9 V, 8 V,

7 V, 6 V

3 V

5 V

4 V

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

0

1

2

3

4

02468 10

I

D

at 250 mA

I

D

at 75 mA

R

DS(on)

- On-Resistance (Ω)

T

J

- Junction Temperature (°C)

0.0

0.4

0.8

1.2

1.6

2.0

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V at 250 mA

R

DS(on)

- On-Resistance

(Normalized)

V

GS

= 4.5 V

at 200 mA

Transfer Characteristics

On-Resistance vs. Drain Current

Threshold Voltage Variance Over Temperature

0.0

0.3

0.6

0.9

1.2

01234567

V

GS

- Gate-to-Source Voltage (V)

T

J

= - 55 °C

125 °C

25 °C

I

D

- Drain Current (A)

I

D

- Drain Current (A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0 0.2 0.4 0.6 0.8 1.0

V

GS

= 4.5 V

R

DS(on)

- On-Resistance (Ω)

V

GS

= 10 V

- 0.8

- 0.6

- 0.4

- 0.2

0

0.2

0.4

- 50 - 25 0 25 50 75 100 125 150

I

D

= 250 µA

T

J

- Junction Temperature (°C)

V

GS(th)

- Variance (V)

2N7002E-T1-GE3

2N7002E-T1-GE3

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