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VOMA617A-X001T

P1-P3P4-P6P7-P9P10-P10
VOMA617A
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 03-May-2018
1
Document Number: 84433
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Low Input Current,
SOP-4, Mini-Flat Package
DESCRIPTION
The VOMA617A series has a GaAlAs infrared emitting diode,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 4-pin mini-flat package.
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits, specifically for
use in automotive, as well as high reliable industrial
applications.
FEATURES
• AEC-Q101 qualified
• High CTR with low input current
• SOP-4 low profile package
• High collector emitter voltage, V
CEO
= 80 V
• Isolation test voltage = 3750 V
RMS
• Low coupling capacitance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Galvanic and noise isolation
• Signal transmission
• Hybrid / electric vehicle applications
• Battery management
• 48 V board net
• System control
AGENCY APPROVALS
• UL1577
• cUL 1577
• DIN EN 60747-5-5 (VDE 0884-5)
• CQC GB4943.1-2011
Note
• Additional options may be possible, please contact sales office
E
CA
C
1
2
4
3
ORDERING INFORMATION
VOMA617A-#X001T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED / PACKAGE
CTR (%)
5 mA
UL, cUL, VDE, CQC 50 to 600 100 to 200 160 to 320 130 to 260
SOP-4 VOMA617A-X001T VOMA617A-3X001T VOMA617A-4X001T VOMA617A-8X001T
SOP-4
≥ 5 mm
VOMA617A
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 03-May-2018
2
Document Number: 84433
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Power dissipation P
diss
30 mW
Forward current I
F
20 mA
Surge forward current t
p
≤ 10 μs I
FSM
0.5 A
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
80 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
COUPLER
Total power dissipation P
tot
180 mW
Storage temperature range T
stg
-40 to +150 °C
Ambient temperature range T
amb
-40 to +110 °C
Soldering temperature t = 10 s T
sld
260 °C
10
100
1000
10000
0
50
100
150
200
0 255075100125
Axis Title
1st line
2nd line
2nd line
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Phototransistor
IR diode
Coupled device
10
100
1000
10000
0
5
10
15
20
25
0 255075100125
Axis Title
1st line
2nd line
2nd line
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
VOMA617A
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 03-May-2018
3
Document Number: 84433
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
Fig. 3 - Test Circuit for Switching Characteristics Fig. 4 - Parameter and Limit Definition
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 5 mA V
F
- 1.33 1.5 V
Reverse current V
R
= 5 V I
R
- - 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
I
-40-pF
OUTPUT
Collector emitter leakage current V
CE
= 50 V I
CEO
- 1 100 nA
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
80 - - V
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
-7-pF
COUPLER
Collector emitter saturation voltage I
F
= 5 mA, I
C
= 1.25 mA V
CEsat
- 0.25 0.4 V
Cut-off frequency I
F
= 10 mA, V
CC
= 5 V, R
L
= 100 Ω f
CTR
- 155 - kHz
Coupling capacitance f = 1 MHz C
IO
-1.2- pF
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
VOMA617A CTR 50 - 600 %
VOMA617A-3 CTR 100 - 200 %
VOMA617A-4 CTR 160 - 320 %
VOMA617A-8 CTR 130 - 260 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise time
I
C
= 2 mA, V
CC
= 5 V,
R
L
= 100 Ω
t
r
-2.3- μs
Fall time t
f
-3.2- μs
Turn-on time t
on
-4.9- μs
Turn-off time t
off
-3.3- μs
SATURATED
Rise time
I
F
= 5 mA, V
CC
= 5 V,
R
L
= 1.9 kΩ
t
r
-1.1- μs
Fall time t
f
-6.2- μs
Turn-on time t
on
-2.0- μs
Turn-off time t
off
-10.6- μs
23029
Input
V
OUT
V
CC
= 5 V
R
L
22986
90 %
10 %
Input pulse
Output pulse
t
r
t
on
t
f
t
off
5 V
P1-P3P4-P6P7-P9P10-P10

VOMA617A-X001T

Mfr. #:
Buy VOMA617A-X001T
Manufacturer:
Vishay / Siliconix
Description:
Transistor Output Optocouplers 80V Vceo; 3750 Vrms SOP-4; 50-600 CTR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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