IPD30N06S4L23ATMA2

P1-P3 P4-P6 P7-P9

IPD30N06S4L-23

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

30 A

T

C

=100°C, V

GS

=10V

1)

21

Pulsed drain current

1)

I

D,pulse

T

C

=25°C

120

Avalanche energy, single pulse

1)

E

AS

I

D

=15A

18 mJ

Avalanche current, single pulse

I

AS

-

30 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25°C

36 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

−

Value

V

DS

60 V

R

DS(on),max

23

mΩ

I

D

30 A

Product Summary

PG-TO252-3-11

Type Package Marking

IPD30N06S4L-23 PG-TO252-3-11 4N06L23

Rev. 1.0 page 1 2009-03-23

IPD30N06S4L-23

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

1)

Thermal resistance, junction - case

R

thJC

- - - 4.2 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area2

)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

60 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=10µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=60V, V

GS

=0V,

T

j

=25°C

- 0.01 1 µA

V

DS

=60V, V

GS

=0V,

T

j

=125°C

2)

- 5 100

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=15A

-2740

mΩ

V

GS

=10V, I

D

=30A

-1823

Values

Rev. 1.0 page 2 2009-03-23

IPD30N06S4L-23

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

1)

Input capacitance

C

iss

- 1200 1560 pF

Output capacitance

C

oss

- 325 420

Reverse transfer capacitance

C

rss

-1836

Turn-on delay time

t

d(on)

-4-ns

Rise time

t

r

-1-

Turn-off delay time

t

d(off)

-15-

Fall time

t

f

-3-

Gate Char

g

e Characteristics

1)

Gate to source charge

Q

gs

- 4.9 6.4 nC

Gate to drain charge

Q

gd

- 2.1 4.2

Gate charge total

Q

g

- 16.1 21

Gate plateau voltage

V

plateau

- 4.1 - V

Reverse Diode

Diode continous forward current

1)

I

S

- - 30 A

Diode pulse current

1)

I

S,pulse

- - 120

Diode forward voltage

V

SD

V

GS

=0V, I

F

=30A,

T

j

=25°C

0.6 0.95 1.3 V

Reverse recovery time

1)

t

rr

V

R

=30V, I

F

=I

S

,

di

F

/dt =100A/µs

-10-ns

Reverse recovery charge

1)

Q

rr

-10-nC

1)

Specified by design. Not subject to production test.

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f =1MHz

V

DD

=30V, V

GS

=10V,

I

D

=30A, R

G

=3.5Ω

V

DD

=48V, I

D

=30A,

V

GS

=0 to 10V

Rev. 1.0 page 3 2009-03-23

P1-P3 P4-P6 P7-P9

IPD30N06S4L23ATMA2

Mfr. #:

Buy IPD30N06S4L23ATMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFET

Lifecycle:

New from this manufacturer.

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