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MUN5316DW1T1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
MUN531
1DW1T1 Series
http://onsemi.com
4
Figure 1. Derating Curve
300
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERA
TURE (
°
C)
R
θ
JA
= 490
°
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
MUN531
1DW1T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS – MUN531
1DW1T1 NPN TRANSISTOR
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
10
02
0
3
0
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=-25
°
C
75
°
C
25
°
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
02
0
4
0
50
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75
°
C
25
°
C
-25
°
C
T
A
=-25
°
C
25
°
C
Figure 5. Output Current versus Input V
oltage
75
°
C
25
°
C
T
A
=-25
°
C
100
10
1
0.1
0.01
0.001
01
2
34
V
in
, INPUT VOL
TAGE (VOL
TS)
56
78
9
1
0
Figure 6. Input V
oltage versus Output Current
50
01
0
2
0
3
0
4
0
4
3
1
2
0
V
R
, REVERSE BIAS VOL
TAGE (VOL
TS)
C
ob
, CAP
ACIT
ANCE (pF)
75
°
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
MUN531
1DW1T1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS – MUN531
1DW1T1 PNP TRANSISTOR
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 7. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOL
TAGE (VOL
TS)
T
A
=-25
°
C
25
°
C
1
2
3
4
5
6
7
8
9
10
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
V
oltage
Figure 1
1. Input V
oltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75
°
C
-25
°
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
=-25
°
C
25
°
C
75
°
C
75
°
C
I
C
/I
B
= 10
50
01
0
2
0
3
0
4
0
4
3
1
2
V
R
, REVERSE BIAS VOL
TAGE (VOL
TS)
C
ob
, CAP
ACIT
ANCE (pF)
0
T
A
=-25
°
C
25
°
C
75
°
C
25
°
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
MUN5316DW1T1
Mfr. #:
Buy MUN5316DW1T1
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS NPN/PNP SOT363
Lifecycle:
New from this manufacturer.
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