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MBRS330T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
April, 2017 − Rev. 12
1 Publication Order Number:
MBRS340T3/D
MBRS320T3G, SBRS8320T3G,
MBRS330T3G, NRVBS330T3G,
MBRS340T3G, SBRS8340T3G
Surface Mount
Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
(0.5 V Max @ 3.0 A, T
J
= 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard-Ring for Stress Protection
• Device Passes ISO 7637 Pulse #1
• SBRS8 and NRVB Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Device Meets MSL 1 Requirements
• ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
MBRS320T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
MARKING DIAGRAM
B3x = Device Code
x = 2, 3 or 4
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS330T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
MBRS340T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
(Note: Microdot may be in either location)
SBRS8320T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
NRVBS330T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
SBRS8340T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
SMC 2−LEAD
CASE 403AC
AYWW
B3xG
G
** The Assembly Location code (A) is front side
optional. In cases where the Assembly Location i
s
stamped in the package, the front side assembly
code may be blank.
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,
SBRS8340T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MBRS320T3G,
SBRS8320T3G
MBRS330T3G,
NRVBRS330T3G
MBRS340T3G,
SBRS8340T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
Average Rectified Forward Current I
F(AV)
3.0 @ T
L
= 110°C
4.0 @ T
L
= 105°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
I
FSM
80
A
Operating Junction Temperature T
J
− 65 to +150 °C
ISO 7637 Pulse #1
(100 V, 10W)
5000
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
R
q
JL
11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 A, T
J
= 25°C)
V
F
0.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 100°C)
i
R
2.0
20
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10
0.1
0.20 0.4 0.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1
0.8
i
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
T
J
= −65°C
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V
)
i
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1.00.30.1 0.5 0.7 0.9
10
0.1
0.20 0.4 0.6
1
0.8
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
T
J
= −65°C
0.30.1 0.5 0.7 0.9 1.
0
T
J
= −40°C
T
J
= −40°C
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,
SBRS8340T3G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
0202510 30
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
35 40
I
R
, REVERSE CURRENT (AMPS)
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
1.E−06
1.E−04
1.E−03
1.E−02
1.E−01
0202510 30
V
R
, REVERSE VOLTAGE (V)
35 4
0
I
R
, MAXIMUM REVERSE CURRENT (AMPS
)
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
1.E−06
1.E−04
1.E−03
1.E−02
1.E−01
0
15090 100 110 120
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
130 140
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0
40123
I
O
, AVERAGE FORWARD CURRENT (A)
1.6
4.5 5
P
FO
, AVERAGE POWER DISSIPATION (W)
1
2
3
4
5
SQUARE WAVE
dc
0.2
0.4
0.6
0.8
1.8
2
0.5
1.5
2.5
3.5
4.5
3.52.51.50.5
SQUARE
WAVE
dc
I
PK
/I
O
= 5
I
PK
/I
O
= p
1.E−05
515 515
1
1.2
1.4
1.E−05
Freq = 20 kHz
R
q
JL
= 11°C/W
Figure 7. Typical Capacitance
700
0
360 162024
V
R
, REVERSE VOLTAGE (V)
100
28 32 40
C, CAPACITANCE (pF)
T
J
= 25°C
200
300
400
500
600
4812
TYPICAL CAPACITANCE AT 0 V = 658 pF
P1-P3P4-P4

MBRS330T3G

Mfr. #:
Buy MBRS330T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 30V
Lifecycle:
New from this manufacturer.
Delivery:
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