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NLX1G332CMX1TCG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 5
1 Publication Order Number:
NLX1G332/D
NLX1G332
3-Input OR Gate
The NLX1G332 is an advanced high−speed 3−input CMOS OR
gate in ultra−small footprint.
The NLX1G332 input structures provide protection when voltages
up to 7.0 V are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
= 2.4 ns (Typ) @ V
CC
= 5.0 V
• Designed for 1.65 V to 5.5 V V
CC
Operation
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• 24 mA Balanced Output Source and Sink Capability
• Balanced Propagation Delays
• Overvoltage Tolerant (OVT) Input Pins
• Ultra−Small Packages
• These are Pb−Free Devices
C
B
A
Y
GND
1
2
3
5
4
C
Y
≥1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
V
CC
B
A
PIN ASSIGNMENT
1
2
3B
A
GND
4
5V
CC
Y
FUNCTION TABLE
H
X
X
L
Input
X
H
X
L
6C
Pin Function
AB
X
X
H
L
Output
H
H
H
L
CY
H − HIGH Logic Level
L − LOW Logic Level
X = Either LOW or HIGH Logic Level
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
X = Device Marking
M = Date Code
G = Pb−Free Package
MARKING
DIAGRAMS
UDFN6
1.2 x 1.0
CASE 517AA
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
M
1
6 M
1
M
6
6
NLX1G332
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −50 mA
I
OK
DC Output Diode Current V
OUT
< GND −50 mA
I
O
DC Output Source/Sink Current ±50 mA
I
CC
DC Supply Current Per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
q
JA
Thermal Resistance (Note 1) 496 °C/W
P
D
Power Dissipation in Still Air @ 85°C 252 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125 °C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
IN
Digital Input Voltage (Note 6) 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 1.8 V ± 0.15 V
V
CC
= 2.5 V ± 0.2 V
V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
0
0
20
20
10
5
ns/V
6. Unused inputs may not be left open. All inputs must be tied to a high or low−logic input voltage level.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLX1G332
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= −555C to +1255C
Unit
Min Typ Max Min Max
V
IH
Low−Level
Input
Voltage
1.65 0.75 x V
CC
0.75 x V
CC
V
2.3 to 5.5 0.70 x V
CC
0.70 x V
CC
V
IL
Low−Level
Input
Voltage
1.65 0.25 x V
CC
0.25 x V
CC
V
2.3 − 5.5 0.30 x V
CC
0.30 x V
CC
V
OH
High−
Level
Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
= −100 mA
1.65 − 5.5 V
CC
−0.1 V
CC
V
CC
−0.1
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
2.7
3.0
3.0
4.5
1.29
1.9
2.2
2.4
2.3
3.8
1.52
2.15
2.4
2.8
2.68
4.2
1.29
1.9
2.2
2.4
2.3
3.8
V
OL
Low−Level
Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 100 mA
1.65 − 5.5 0.1 0.1
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 12 mA
I
OH
= 16 mA
I
OH
= 24 mA
I
OH
= 32 mA
1.65
2.3
2.7
3.0
3.0
4.5
0.08
0.1
0.12
0.15
0.22
0.22
0.24
0.3
0.4
0.4
0.55
0.55
0.24
0.3
0.4
0.4
0.55
0.55
I
IN
Input
Leakage
Current
0 v V
IN
v 5.5V 0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power−Off
Output
Leakage
Current
V
IN
or V
OUT
=
5.5 V
0 1.0 10
mA
I
CC
Quiescent
Supply
Current
0 v V
IN
v V
CC
5.5 1.0 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 2.5 nS)
Symbol Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Input to Output
1.65−1.95
R
L
= 1 MW, C
L
= 15 pF
2.0 5.5 18.5 2.0 19
ns
2.3−2.7
R
L
= 1 MW, C
L
= 15 pF
0.8 3.0 11 0.8 11.5
3.0−3.6
R
L
= 1 MW, C
L
= 15 pF
0.5 2.6 7.5 0.5 8.0
R
L
= 500 W, C
L
= 50 pF
1.5 3.0 8.5 1.5 9.0
4.5−5.5
R
L
= 1 MW, C
L
= 15 pF
0.5 2.2 5.5 0.5 6.0
R
L
= 500 W, C
L
= 50 pF
0.8 2.4 7.0 0.8 7.5
C
IN
Input Capacitance 5.5 V
IN
= 0 V or V
CC
4.0 pF
C
PD
Power Dissipation
Capacitance (Note 7)
3.3
5.5
10 MHz
V
IN
= 0 V or V
CC
20
26
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
• V
CC
• f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
• V
CC
2
• f
in
+ I
CC
• V
CC.
P1-P3P4-P6P7-P7

NLX1G332CMX1TCG

Mfr. #:
Buy NLX1G332CMX1TCG
Manufacturer:
ON Semiconductor
Description:
Logic Gates 3 INPUT OR GATE
Lifecycle:
New from this manufacturer.
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