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PBSS4240T,215

P1-P3P4-P6P7-P8
2004 Jan 09 3
NXP Semiconductors Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
PBSS4240T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 2 A
I
CM
peak collector current − 3 A
I
BM
peak base current − 300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
amb
≤ 25 °C; note 2 − 480 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
2004 Jan 09 4
NXP Semiconductors Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
PBSS4240T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 30 V − − 100 nA
I
E
= 0; V
CB
= 30 V; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 4 V − − 100 nA
h
FE
DC current gain I
C
= 100 mA; V
CE
= 2 V 350 470 −
I
C
= 500 mA; V
CE
= 2 V 300 450 −
I
C
= 1 A; V
CE
= 2 V 300 420 −
I
C
= 2 A; V
CE
= 2 V 150 250 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
= 1 mA − 45 70 mV
I
C
= 500 mA; I
B
= 50 mA − 70 100 mV
I
C
= 750 mA; I
B
= 15 mA − 120 180 mV
I
C
= 1 A; I
B
= 50 mA; note 1 − 130 180 mV
I
C
= 2 A; I
B
= 200 mA; note 1 − 240 320 mV
R
CEsat
equivalent on-resistance I
C
= 500 mA; I
B
= 50 mA; note 1 − 140 <200 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= 2 A; I
B
= 200 mA; note 1 − − 1.1 V
V
BEon
base-emitter turn on voltage I
C
= 100 mA; V
CE
= 2 V − − 0.75 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 15 20 pF
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V; f = 100 MHz 100 230 − MHz
2004 Jan 09 5
NXP Semiconductors Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
PBSS4240T
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
P1-P3P4-P6P7-P8

PBSS4240T,215

Mfr. #:
Buy PBSS4240T,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN 40V 2A
Lifecycle:
New from this manufacturer.
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