Datasheet Rev. 1.4 8 2013-02-12
HITFET
®
BTS3408G
Input ’High’ voltage
IN1, IN2:
ENA:
V
INH
V
ENAH
2.0
2.0
–
–
–
–
V–
Input voltage hysteresis
V
INhys
–300–mV–
Input pull down current
IN1, IN2:
ENA:
I
INPD
I
ENAPD
20
20
50
50
100
100
μA–
Digital Output (FAULT
)
Output ’Low’ voltage
V
FLTL
––0.4VI
FLTL
=1.6mA,
Diagnostic Functions
Open load / short to ground
detection voltage
V
DS(OL)
0.5*V
S
0.7*V
S
0.9*V
S
V–
Fault filter time for open load
t
filter(OL)
30 100 200 μs V
S
=5V
Protection Functions
3)
Thermal overload trip
temperature
T
jt
150 165 180 °C–
Thermal hysteresis
Δ
T
jt
–10–Κ –
Unclamped single pulse inductive
energy
one channel active,T
j(start)
=25°C
both channel active,T
j(start)
=25°C
one channel active,T
j(start)
=150°C
both channel active,T
j(start)
=150°C
E
AS
800
550
240
240
mJ I
D
=0.7 A
1)
See also diagram 4 on page 11.
2)
See also diagram 5 on page 11.
3)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation. Not subject to production test, specified by design.
Electrical Characteristics (cont’d)
V
S
= 4.5V to 18V; T
j
= -40°C to 150°C; unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
