NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
260 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
6V
Continuous Collector Current I
C
500 mA
Peak Collector Current (Pulse Width=20ns) I
CM
60 A
Power Dissipation P
tot
680 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CES
260 V I
C
=1mA
T
amb
= -55 to +175°C
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
100 V
I
C
=100µA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
0.1
10
µA
µA
V
CB
=180V
V
CB
=180V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=10mA, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=10mA, I
B
=1mA*
Current in Second
Breakdown (Pulsed)
I
SB
15
25
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
Static Forward Current
Transfer Ratio
h
FE
25 I
C
=10mA, V
CE
=10V*
Transition Frequency f
T
40 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Capacitance
C
cb
8pFV
CB
=20V, I
E
=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX415
3-171
C
B
E
3-172
ZTX415
Drive Current = 5mA/ns
TYPICAL CHARACTERISTICS
Maximum Avalanche Current
v Pulse Width
I
-
(
A
)
h
FE
v I
C
Minimum starting voltage
as a function of capacitance
V
-
(
V
)
h
I
USB
v Temperature
for the specified conditions
Minimum starting voltage
as a function of drive current
04020 80 100 120 140 160 18060
0
20
40
60
80
100
120
140
160
180
1.
2.
3.
Pulse Width (ns)
1. >4x10 Operations Without Failure
2. 10 Operations To Failure
3. 10 Operations To Failure
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0
10
20
30
40
Temperature (°C)
V = 250V
I
-
(
A
)
V = 200V
100
µ
A
1mA 10mA 100mA 1A
0
20
40
60
80
100
Collector Current
175°C
25°C
-55°C
100p 1n 10n 100n
100
120
140
160
180
200
220
Risetime of Base
Collector-Emitter Capacitance (F)
I =50mA
I =100mA
I =200mA
110
145
150
155
160
165
170
175
180
Risetime of Base Drive (mA/ns)
V
-
(V)
I =60mA
I =100mA
I =200mA
C=620pF
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature (°C)
100
120
140
150
160
C = 620pF
Minimum starting voltage
as a function of temperature
V
-
(V)
V =10V
