QCK5 Datasheet QCK5, QCK5TR | P1-P3

Parameter Symbol Rating Units

Operating Temperature T

OPR

-40 to +100

°C

Storage Temperature T

STG

-40 to +100

°C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

Preheating Stage for 60 sec 183

°C

Reflow Stage for 5 sec 230

°C

Rate of Temperature Rise 3 to 10

°C/S

EMITTER

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

100 mW

SENSOR

Collector-Emitter Voltage V

CEO

30 V

Emitter-Collector Voltage V

ECO

4V

Power Dissipation

(1)

P

D

100 mW

PACKAGE DIMENSIONS

L

C

0.365±0.020

(4X)

0.280

0.0283

0.060±0.020

(4X)

0.085

0.370±0.020

0.157

0.185

0.527

0.100±0.005

0.015

0.1215

0.020SQ

0.400±0.020

(4X)

(2X)

45.0°

2

0.2200

L

C

PIN 1

IDENTIFICATION

0.295±0.005

(4X)

C

L

C

PIN 1 CATHODE

PIN 2 ANODE

PIN 3 EMITTER

PIN 4 COLLECTOR

3

4

1

OPTICAL C

L

C

L

OPTICAL C OPTICAL C

L

C

L

NOTES:

1. Dimensions for all drawings are in inches.

2. Tolerance of ± .010 on all non-nominal dimensions

unless otherwise specified.

3. All leads are coplanar within .006”.

4. Housing material is electrically conductive.

NOTES (Applies to Max Ratings and Characteristics Tables.)

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as

cleaning agents.

1 of 5 100010F

QCK5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

FEATURES

• No contact switching

• 4 mm wide slot

• Leads formed for surface mounting

• Housing material resistant to high

temperatures

• Daylight filter on sensor

• Transistor Output

• Tape & Reel Option: .TR (See Tape & Reel Dimensions)

4

3

1

2

SCHEMATIC

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTER

Forward Voltage I

F

= 20 mA V

F

——1.7 V

Reverse Current V

R

= 5 V I

R

——100

µ

A

Peak Emission Wavelength I

F

= 20 mA

!

PE

— 940 — nm

SENSOR

Collector-Emitter Breakdown I

C

= 1 mA BV

CEO

30 —— V

Emitter-Collector Breakdown I

E

= 0.1 mA BV

ECO

5 —— V

Dark Current V

CE

= 10 V, I

F

= 0 mA I

D

——100 nA

COUPLED

Collector Current I

F

= 20 mA, V

CE

= 5 V I

C(ON)

2.0 —— mA

Collector Emitter I

F

= 20 mA, I

C

= 0.5 mA V

CE (SAT)

——0.4 V

Saturation Voltage

Rise Time V

CE

= 5 V, R

L

= 100 " t

r

— 8 —

µ

s

Fall Time I

C

= 5 mA t

f

— 50 —

µ

s

QCK5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

2 of 5 100010F

ELECTRICAL / OPTICAL CHARACTERISTICS

(T

A

= 25°C)

Fig. 2 Forward Current vs. Forward Voltage

V

F

- Forward Voltage (V)

1.0 1.1 1.2 1.3 1.4 1.5 1.6

I

F

- Forward Current (mA)

0

20

40

60

80

100

Fig. 1 Forward Voltage vs. Ambient Temperature

T

A

- Ambient Temperature (

o

C

)

-40 -20 0 20 40 60 80 100

V

F

- Forward Voltage (V)

0

1

2

3

Fig. 3 Collector Emitter Dark Current (Normalized)

vs. Ambient Temperature

T

A

-Ambient Temperature (

o

C

)

40 60 80 100

I

CEO

- Normalized Dark Current

10

-1

10

0

10

1

10

2

10

3

10

4

Fig. 4 Rise and Fall Time vs. Load Resistance

R

L

-Load Resistance (")

10 100 1000

Rise and Fall Time (µs)

0.1

1

10

100

I

F

Pulsed

Pulse Width = 100 µs

Duty Cycle = 0.1%

t

f

t

r

V

CC

= 5 V

I

C

= 0.5 mA

t

pw

= 100 us

T = 10 ms

T

A

= 25˚C

T

A

= 25˚C

T

A

= 25˚C

t

r

t

f

I

F

= 50 mA

I

F

= 10 mA

Normalized to:

V

CE

= 25 V

V

CE

= 25 V

V

CE

= 10 V

I

F

= 20 mA

I

F

= 100 mA

QCK5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

3 of 5 100010F

I

C(ON)

Fig. 5 Collector Current vs. Forward Current

I

F

- FORWARD CURRENT (mA)

1 10 100 1000

I

C(ON)

- COLLECTOR CURRENT (mA)

I

C(ON)

- COLLECTOR CURRENT (mA)

0.01

0.1

1

10

Normalized to:

I

F

= 20 mA

V

CE

= 5 V

Pulse Width = 100 µs

Fig. 6 Collector Current vs. Collector Emitter Voltage

V

CE

- COLLECTOR EMITTER VOLTAGE (V)

0.1 1 10

0

1

2

3

4

5

6

7

8

9

10

I

F

= 30 mA

I

F

= 20 mA

I

F

= 10 mA

T

A

= 25˚C

Fig. 7 Collector Current vs. Ambient Temperature

T

A

-Ambient Temperature (

o

C

)

-40 -20 0 20 40 60 80 100

I

C(ON)

- Normalized Collector Current

0

1

10

Normalized to:

V

CE

= 5 V

I

F

=10 mA

T

A

= 25˚C

I

F

= 20 mA

I

F

= 10 mA

I

F

= 5 mA

Fig. 8 Collector Current vs. Shield Distance

Fig. 9 Power Dissipation vs. Ambient Temperature (TBD)

d - Distance (mm)

12345678910

I

C(ON)

- Normalized Collector Current

0.001

0.010

0.100

1.000

Normalized to

value with shield

removed

Black Shield

0

d

+

E

D

+

d

0

QCK5

QCK5

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