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NBSG16VSBAEVB

P1-P3P4-P6P7-P9P10-P12P13-P14
NBSG16VS
http://onsemi.com
4
Table 3. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor (D, D)
75 k
Internal Input Pullup Resistor (D)
36.5 k
ESD Protection Human Body Model
Machine Model
> 2 kV
> 100 V
Moisture Sensitivity (Note 4) Pb Pkg Pb−Free Pkg
FCBGA−16
QFN−16
Level 3
Level 1
Level 3
Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 192
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
4. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply V
EE
= 0 V 3.6 V
V
EE
Negative Power Supply V
CC
= 0 V −3.6 V
V
I
Positive Input
Negative Input
V
EE
= 0 V
V
CC
= 0 V
V
I
v V
CC
V
I
w V
EE
3.6
−3.6
V
V
V
INPP
Differential Input Voltage |D − D| V
CC
− V
EE
w 2.8 V
V
CC
− V
EE
t 2.8 V
2.8
|V
CC
− V
EE
|
V
V
I
OUT
Output Current Continuous
Surge
25
50
mA
mA
I
IN
Input Current Through R
T
(50 Resistor)
Static
Surge
45
80
mA
mA
I
BB
V
BB
Sink/Source 1 mA
I
MM
V
MM
Sink/Source 1 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
JA
Thermal Resistance (Junction−to−Ambient)
(Note 5)
0 lfpm
500 lfpm
0 lfpm
500 lfpm
FCBGA−16
FCBGA−16
QFN−16
QFN−16
108
86
41.6
35.2
°C/W
JC
Thermal Resistance (Junction−to−Case) 2S2P (Note 5)
2S2P (Note 6)
FCBGA−16
QFN−16
5.0
4.0
°C/W
°C/W
T
sol
Wave Solder Pb
Pb−Free
225
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. JEDEC standard 51−6 multilayer board − 2S2P (2 signal, 2 power).
6. JEDEC standards multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
NBSG16VS
http://onsemi.com
5
Table 5. DC CHARACTERISTICS, INPUT WITH VARIABLE PECL OUTPUT V
CC
= 2.5 V; V
EE
= 0 V (Note 7)
Symbol Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Negative Power Supply Current 18 25 32 18 25 32 18 25 32 mA
V
OH
Output HIGH Voltage (Note 8) 1315 1440 1565 1305 1430 1555 1305 1430 1555 mV
V
OL
Output LOW Voltage (Note 8)
(Max Swing)
(V
CTRL
= V
CC
− 600 mV)
645
1090
765
1210
885
1330
605
1035
725
1155
845
1275
600
1010
720
1130
840
1250
mV
V
IH
Input HIGH Voltage
(Single−Ended) (Notes 10 and 11)
V
THR
+ 75
V
CC
−
1000*
V
CC
V
THR
+ 75
V
CC
−
1000*
V
CC
V
THR
+ 75
V
CC
−
1000*
V
CC
mV
V
IL
Input LOW Voltage
(Single−Ended) (Notes 10 and 12)
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
mV
V
BB
PECL Output Voltage Reference 1080 1140 1200 1080 1140 1200 1080 1140 1200 mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Note 9)
(Differential Configuration)
1.2 2.5 1.2 2.5 1.2 2.5 V
V
MM
CMOS Output Voltage Reference
(V
CC
− V
EE
)/2 1100 1250 1400 1100 1250 1400 1100 1250 1400
mV
R
TIN
Internal Input Termination Resistor 45 50 55 45 50 55 45 50 55
I
IH
Input HIGH Current (@ V
IH
) 30 100 30 100 30 100
A
I
IL
Input LOW Current (@ V
IL
) 25 50 25 50 25 50
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
*Typicals used for testing purposes.
7. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.125 V to −0.965 V.
8. All loading with 50 to V
CC
− 2.0 V. V
OH
/V
OL
measured at V
IH
/V
IL
.
9. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
10.V
THR
is the voltage applied to the complementary input, typically V
BB
or V
MM
. V
THR(MIN)
= V
IHCMR
+ 75 mV. V
THR(MAX)
= V
IHCMR
− 75 mV.
11. V
IH
cannot exceed V
CC
.
12.V
IL
always w V
EE
.
NBSG16VS
http://onsemi.com
6
Table 6. DC CHARACTERISTICS, INPUT WITH VARIABLE PECL OUTPUT V
CC
= 3.3 V; V
EE
= 0 V (Note 18)
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Negative Power Supply Current 20 27 34 20 27 34 20 27 34 mA
V
OH
Output HIGH Voltage (Note 13) 2095 2220 2345 2085 2210 2335 2075 2200 2325 mV
V
OL
Output LOW Voltage (Note 13)
(Max Swing)
(V
CTRL
= V
CC
− 600 mV)
1275
1750
1395
1870
1515
1990
1285
1730
1405
1850
1525
1970
1295
1715
1415
1835
1535
1955
mV
V
IH
Input HIGH Voltage
(Single−Ended) (Notes 15 and 16)
V
THR
+ 75
V
CC
−
1000*
V
CC
V
THR
+ 75
V
CC
−
1000*
V
CC
V
THR
+ 75
V
CC
−
1000*
V
CC
mV
V
IL
Input LOW Voltage
(Single−Ended) (Notes 15 and 17)
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
V
IH
−
2500
V
CC
−
1400*
V
THR
− 75
mV
V
BB
PECL Output Voltage Reference 1880 1940 2000 1880 1940 2000 1880 1940 2000 mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Note 14)
(Differential Configuration)
1.2 3.3 1.2 3.3 1.2 3.3 V
V
MM
CMOS Output Voltage Reference
(V
CC
− V
EE
)/2 1500 1650 1800 1500 1650 1800 1500 1650 1800
mV
R
TIN
Internal Input Termination Resistor 45 50 55 45 50 55 45 50 55
I
IH
Input HIGH Current (@ V
IH
) 30 100 30 100 30 100
A
I
IL
Input LOW Current (@ V
IL
) 25 50 25 50 25 50
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
*Typicals used for testing purposes.
13.All loading with 50 to V
CC
− 2.0 V. V
OH
/V
OL
measured at V
IH
/V
IL
.
14.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
15.V
THR
is the voltage applied to the complementary input, typically V
BB
or V
MM
. V
THR(MIN)
= V
IHCMR
+ 75 mV. V
THR(MAX)
= V
IHCMR
− 75 mV.
16.V
IH
cannot exceed V
CC
.
17.V
IL
always w V
EE
.
18.Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.925 V to −0.165 V.
P1-P3P4-P6P7-P9P10-P12P13-P14

NBSG16VSBAEVB

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Manufacturer:
ON Semiconductor
Description:
Clock & Timer Development Tools BBG NBSG16VSBA EVAL BOARD
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