PHD13003C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 29 July 2010 2 of 12
NXP Semiconductors
PHD13003C
NPN power transistor with integrated diode
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
SOT54 (TO-92)
2 C collector
3Eemitter
123
sym13
C
E
B
Table 3. Ordering information
Type number Package
Name Description Version
PHD13003C TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CESM
collector-emitter peak voltage V
BE
= 0 V - 700 V
V
CBO
collector-base voltage I
E
= 0 A - 700 V
V
CEO
collector-emitter voltage I
B
= 0 A - 400 V
I
C
collector current DC - 1.5 A
I
CM
peak collector current - 3 A
I
B
base current DC - 0.75 A
I
BM
peak base current - 1.5 A
P
tot
total power dissipation T
lead
≤ 25 °C; see Figure 1 -2.1W
T
stg
storage temperature -65 150 °C
T
j
junction temperature - 150 °C
V
EBO
emitter-base voltage I
C
= 0 A; I(Emitter) = 10 mA - 9 V
