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2SK3824

P1-P3P4-P4
2SK3824
No.8230-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8230
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
31005QA TS IM TB-00001200
2SK3824
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
•
Motor drive, DC / DC converter.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
60 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
60 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 240 A
Allowable Power Dissipation P
D
1.75 W
Tc=25°C60W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 E
AS
125 mJ
Avalanche Current *2 I
AV
60 A
Note : *1 V
DD
=20V, L=50µH, I
AV
=60A
*2 L≤50µH, Single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 60 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=60V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
= ±16V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.2 2.6 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=30A 24 40 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=30A, V
GS
=10V 11.5 15 mΩ
R
DS
(on)2 I
D
=30A, V
GS
=4V 16 22 mΩ
Marking : K3824 Continued on next page.
2SK3824
No.8230-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Input Capacitance Ciss V
DS
=20V, f=1MHz 3500 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 500 pF
Reverse Transfer Capacitance Crss V
DS
=20V, f=1MHz 350 pF
Turn-ON Delay Time t
d
(on) See specified Test Circuit. 26 ns
Rise Time t
r
See specified Test Circuit. 230 ns
Turn-OFF Delay Time t
d
(off) See specified Test Circuit. 255 ns
Fall Time t
f
See specified Test Circuit. 230 ns
Total Gate Charge Qg V
DS
=30V, V
GS
=10V, I
D
=60A 67 nC
Gate-to-Source Charge Qgs V
DS
=30V, V
GS
=10V, I
D
=60A 10.6 nC
Gate-to-Drain “Miller” Charge Qgd V
DS
=30V, V
GS
=10V, I
D
=60A 10 nC
Diode Forward Voltage V
SD
I
S
=60A, V
GS
=0 1.07 1.5 V
Package Dimensions
unit : mm
2052C
Switching Time Test Circuit Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.55
2.7
123
PW=10µs
D.C.≤1%
P. G
50Ω
G
S
D
I
D
=30A
R
L
=1.0Ω
V
DD
=30V
V
OUT
2SK3824
V
IN
10V
0V
V
IN
50Ω
10V
0V
≥50Ω
V
DD
L
2SK3824
2SK3824
No.8230-3/4
R
DS
(on) -- V
GS
IT08848
R
DS
(on)
-- Tc
IT08849
I
D
-- V
DS
IT08846
I
D
-- V
GS
IT08847
0
20
120
100
80
60
40
0
20
120
100
80
60
40
--50 --25 150
03010 15 20 255
Ciss, Coss, Crss -- V
DS
1000
100
10000
IT08853
IT08851
I
F
-- V
SD
IT08850
0.1 1.0
23 57
3
10
100
1.0
y
fs-- I
D
1.51.20.60.3 0.90
0.01
0.1
1.0
10
100
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
7
5
5
7
2
3
5
7
2
3
2
10 100
23 57 7352
3456789210
0
15
20
25
35
30
10
5
0
15
20
25
35
30
10
5
12301.51.00.5 2.0 2.5 3.00 654
0 25 50 75 100 125
7
5
2
3
7
5
6V
Tc=25°C
25°C
--25
°
C
25°C
Tc= --25
°
C
75
°
C
Tc=
75
°
C
I
D
=30A
Tc=75
°C
25°C
--
25°C
I
D
=30A, V
GS
=4V
I
D
=30A, V
GS
=10V
Tc= --25
°C
75
°
C
25
°
C
V
DS
=10V
Tc=
75
°
C
25
°
C
--
25
°
C
V
GS
=0
Coss
Ciss
Crss
IT08852
0.1 1.0
23 5723 57 23 5
10
7
100
100
10
1000
3
5
7
2
2
3
5
7
SW Time -- I
D
t
d
(off)
t
d
(on)
V
DD
=30V
V
GS
=10V
V
GS
=3V
4V
V
DS
=10V
t
f
10V
8V
f=1MHz
t
r
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Case Temperature, Tc --
°C
Forward Transfer Admittance,
y
fs -- S
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Drain Current, I
D
-- A
Drain Current, I
D
-- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, V
DS
-- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, V
SD
-- V
Forward Current, I
F
-- A
P1-P3P4-P4

2SK3824

Mfr. #:
Buy 2SK3824
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH 4V DRIVE SERIES
Lifecycle:
New from this manufacturer.
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