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VS-40CTQ045-1PBF

P1-P3P4-P6P7-P8
VS-40CTQ045SPbF, VS-40CTQ045-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 08-Dec-14
1
Document Number: 94213
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• 150 °C T
J
operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
2 x 20 A
V
R
45 V
V
F
at I
F
0.48 V
I
RM
max. 115 mA at 125°C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
20
TO-262AATO-263AB (D
2
PAK)
V
S-40CTQ045SPbF VS-40CTQ045-1PbF
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 1240 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.48 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-40CTQ045SPbF
VS-40CTQ045-1PbF
UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 116 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
1240
10 ms sine or 6 ms rect. pulse 350
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.40 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
VS-40CTQ045SPbF, VS-40CTQ045-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 08-Dec-14
2
Document Number: 94213
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.53
V
40 A 0.68
20 A
T
J
= 125 °C
0.48
40 A 0.67
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 115
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.27 V
Forward slope resistance r
t
8.72 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 2800 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK) 40CTQ045S
Case style TO-262AA 40CTQ045-1
VS-40CTQ045SPbF, VS-40CTQ045-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 08-Dec-14
3
Document Number: 94213
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 1.41.2 1.8
0
1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
40
45
25 30 35
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40
50
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
100
P1-P3P4-P6P7-P8

VS-40CTQ045-1PBF

Mfr. #:
Buy VS-40CTQ045-1PBF
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 40 Amp 45 Volt Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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