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TPSMC10AHE3_A/I

P1-P3P4-P6P7-P9P10-P12P13-P15
1. Product profile
1.1 General description
The devices are designed to protect high-speed interfaces such as High-Definition
Multimedia Interface (HDMI), DisplayPort, SuperSpeed USB, external Serial Advanced
Technology Attachment (eSATA) and Low Voltage Differential Signaling (LVDS) interfaces
against ElectroStatic Discharge (ESD).
The devices include high-level ESD protection diodes for ultra high-speed signal lines and
are available in two package variants: XSON10U and TSSOP10.
All signal lines are protected by a special diode configuration offering ultra low line
capacitance of only 0.5 pF. These diodes provide protection to downstream components
from ESD voltages up to ±8 kV contact according to IEC 61000-4-2, level 4.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
System ESD protection for USB 2.0 and USB SuperSpeed 3.0, HDMI 1.3 and
HDMI 1.4, DisplayPort, eSATA and LVDS
All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of ±8 kV according to IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Signal lines with ≤ 0.05 pF matching capacitance between signal pairs
Line capacitance of only 0.5 pF for each channel
4-channel, XSON10U or TSSOP10 Pb-free package
Design-friendly ’pass-thru’ signal routing
1.3 Applications
The devices are designed for high-speed receiver and transmitter port protection:
TVs, monitors
DVD recorders and players
Notebooks, mother boards, graphic cards and ports
Set-top boxes and game consoles
IP4284CZ10-TB; IP4284CZ10-TT
ESD protection for ultra high-speed interfaces
Rev. 02 — 1 April 2010 Product data sheet
IP4284CZ10-TB_TT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 2 of 15
NXP Semiconductors
IP4284CZ10-TB/TT
ESD protection for ultra high-speed interfaces
2. Pinning information
3. Ordering information
Table 1. Pinning
Pin Symbol Description Simplified outline Graphic symbol
IP4284CZ10-TB (SOT1059-1)
1 CH1 channel 1 ESD protection
XSON10U
2 CH2 channel 2 ESD protection
3 GND ground
4 CH3 channel 3 ESD protection
5 CH4 channel 4 ESD protection
6 n.c. not connected
7 n.c. not connected
8 GND ground
9 n.c. not connected
10 n.c. not connected
IP4284CZ10-TT (SOT552-1)
1 CH1 channel 1 ESD protection
TSSOP10
2 CH2 channel 2 ESD protection
3 GND ground
4 CH3 channel 3 ESD protection
5 CH4 channel 4 ESD protection
6 n.c. not connected
7 n.c. not connected
8 GND ground
9 n.c. not connected
10 n.c. not connected
2
1
3
4
5
10
9
8
7
6
Transparent top view
24
3, 8
018aaa0
01
1 5
15
10 6
24
3, 8
018aaa0
01
1 5
Table 2. Ordering information
Type number Package
Name Description Version
IP4284CZ10-TB XSON10U plastic extremely thin small outline package; no leads; 10 terminals;
UTLP based; body 1 × 2.5 × 0.5 mm
SOT1059-1
IP4284CZ10-TT TSSOP10 plastic thin shrink small outline package; 10 leads; body width 3 mm SOT552-1
IP4284CZ10-TB_TT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 3 of 15
NXP Semiconductors
IP4284CZ10-TB/TT
ESD protection for ultra high-speed interfaces
4. Limiting values
[1] All pins to ground.
5. Characteristics
[1] This parameter is guaranteed by design.
[2] Between signal pin and pin n.c.
[3] Human Body Model (HBM) according to JESD22-A-J114D.
[4] According to IEC 61000-4-5 and IEC 61000-4-9.
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
I
input voltage −0.5 +5.5 V
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2, level 4;
contact discharge
[1]
- ±8kV
T
amb
ambient temperature −40 +85 °C
T
stg
storage temperature −55 +125 °C
Table 4. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
BRzd
Zener diode
breakdown voltage
I
test
=1mA 6- 9V
I
LRzd
Zener diode reverse
leakage current
per TMDS channel;
V
I
=3.0V
--1μA
V
F
forward voltage - 0.7 - V
C
ch(TMDS)
TMDS channel
capacitance
f=1MHz;
V
bias
=2.5V
[1]
0.40.50.7pF
ΔC
ch(TMDS)
TMDS channel
capacitance difference
f=1MHz;
V
bias
=2.5V
[1]
-0.05-pF
C
ch(mutual)
mutual channel
capacitance
f=1MHz;
V
bias
=2.5V
[1][2]
-0.07-pF
R
dyn
dynamic resistance I = 1 A
[4]
positive transient - 1 - Ω
negative transient - 1 - Ω
V
CL(ch)trt(pos)
positive transient channel
clamping voltage
V
ESD
=8kV
[3]
-8-V
P1-P3P4-P6P7-P9P10-P12P13-P15

TPSMC10AHE3_A/I

Mfr. #:
Buy TPSMC10AHE3_A/I
Manufacturer:
Vishay
Description:
TVS DIODE 8.55V 14.5V DO214AB
Lifecycle:
New from this manufacturer.
Delivery:
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