©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN3568
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 60 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 1.0 A
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 30mA, I
B
= 0 60 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 80 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cut-off Current V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
A
= 75°C
50
5.0
nA
µA
I
EBO
Emitter Cut-off Current V
EB
= 4V, I
C
= 0 25 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 1.0V, I
C
= 30mA
V
CE
= 1.0V, I
C
= 150mA
40
40 120
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15mA 0.25 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 1.0V, I
C
= 150mA 1.1 V
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= 10V, f = 1.0MHz 20 pF
C
ib
Input Capacitance V
EB
= 0.5V, f = 1.0MHz 80
h
fe
Small Signal Current Gain I
C
= 50mA, V
CE
= 10V, f = 20MHz 3.0 30
PN3568
NPN General Purpose Amplifier
• This device is designed for general purpose, medium power amplifiers
and switches requiring collector currents to 500mA.
1. Emitter 2. Base 3. Collector
TO-92
1
