V35PWM12
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Vishay General Semiconductor
Revision: 21-Dec-15
1
Document Number: 87653
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.42 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Note
(1)
With infinite heat sink
PRIMARY CHARACTERISTICS
I
F(AV)
35 A
V
RRM
120 V
I
FSM
260 A
V
F
at I
F
= 35 A (T
A
= 125 °C) 0.68 V
T
J
max. 175 °C
Package SlimDPAK
Diode variation Single die
SlimDPAK
TMBS
®
eSMP
®
Series
1
2
K
PIN 1
K
HEATSINK
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V35PWM12 UNIT
Device marking code V35PWM12
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
(1)
35 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
260 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C