STTA406

STTA406
®
November 1999 - Ed: 3C
TURBOSWITCH
ULTRA-FAST HIGH VOLTAGE DIODE
Symbol Parameter VALUE Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
P
Peak forward current (1) Tamb = 65°C δ = 0.5
4A
I
FRM
Repetitive peak forward current tp = 5µs F = 5kHz square 30 A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal 80 A
T
j
Maximum operating junction temperature
125 °C
T
stg
Storage temperature range - 40 to 150 °C
(1) square waveform and on infinite heatsink
ABSOLUTE RATINGS
(limiting values)
DO-201AD
SPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST, AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and
is particularly suitable and efficient in motor control
freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged in DO-201AD this 600V device is
particularly intended for use on 240V domestic
mains.
DESCRIPTION
I
P
4 A
V
RRM
600 V
t
rr
(typ.) 25 ns
V
F
(max) 1.5 V
MAJOR PRODUCT CHARACTERISTICS
TURBOSWITCH is a trademark of STMicroelectronics
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Symbol Parameter Max. Unit
R
th(j-l)
Junction to lead L lead = 10mm 20 °C/W
R
th(j-a)
Junction to ambient on printed circuit L lead = 10mm 75 °C/W
THERMAL DATA
Symbol Parameter Test conditions Typ. Max. Unit
V
F
** Forward voltage drop IF = 4 A Tj = 25°C
Tj = 125°C
1.25
1.75
1.5
V
V
I
R
* Reverse leakage current V
R
= 0.8 V
RRM
Tj = 25°C
Tj = 125°C 0.75
50
2
µA
mA
V
to
Threshold voltage Ip < 3.I
F(AV)
Tj = 125°C
1.15 V
Rd Dynamic resistance 85 m
Test pulse : * tp = 380
µ
s,
δ
< 2%
** tp = 5 ms,
δ
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Typ. Max. Unit
t
rr
Reverse recovery time I
F
= 0.5A I
R
= 1A Irr = 0.25A 25 ns
I
F
= 1A di/dt = -50A/µs V
R
= 30V 55 ns
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Test conditions Typ. Max. Unit
t
fr
Forward recovery time I
F
= 4 A dI
F
/dt = 100 A/µs
Measured at 1.1 x V
F
max.
Tj = 25°C
200 ns
V
FP
Peak forward voltage 20 V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ Rd x I
F
2
(RMS)
STTA406
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0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1:
Power dissipation versus average forward
current.
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Tamb(°C)
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=75°C/W
T
δ
=tp/T
tp
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
1E-3
1E-2
1E-1
1E+0
tp(s)
K=[Zth(j-a)/Rth(j-a)]
T
δ
=tp/T
tp
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(epoxy
printed circuit board, e(Cu)=35µm),
recommended
pad layout).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
1
2
3
4
5
VFM(V)
IFM(A)
Tj=125°C
Maximum values
Tj=125°C
Typical values
Tj=25°C
Maximum values
Fig. 4-1:
Forward voltage drop versus forward
current (low level).
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1
10
50
VFM(V)
IFM(A)
Tj=125°C
Typical values
Tj=125°C
Maximum values
Tj=25°C
Maximum values
Fig 4-2 :
Forward voltage drop versus forward
current (high level).
STTA406
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STTA406

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers 4.0 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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