PACUSB-U1/U2/U3
Rev.2 | Page 4 of 9 | www.onsemi.com
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
PARAMETER CONDITIONS MIN
TYP
MAX
UNITS
R1 Resistance R1 (PACUSB-U1 only) Measured at T
A
= 25°C 12 15 18
Ω
R1 Resistance R1 (PACUSB-U2 only) Measured at T
A
= 25°C 26 33 40
Ω
R1 Resistance R1 (PACUSB-U3 only) Measured at T
A
= 25°C 18 22 26
Ω
R2 Resistance R2 Measured at T
A
= 25°C 1.2 1.5 1.8
kΩ
C1 Capacitance C1 Measured at 1 MHz, 2.5VDC,
T
A
=25°C
38 47 56 pF
I
LEAK
Diode Leakage Current to GND At 3.3VDC and T
A
= 25°C 1 100 nA
V
D1
Diode Reverse-biased Stand-off
Voltage
I = 10μA,T
A
= 25°C
5.5 V
V
D2
Signal Clamp Voltage
Positive Clamp
Negative Clamp
@ 10mA, T
A
= 25°C
@ 10mA, T
A
= 25°C
5.6
-1.2
6.8
-0.8
8.0
-0.4
V
V
V
ESD
In-system ESD Withstand Voltage
Human Body Model, MIL-STD-
883, Method 3015
IEC 61000-4-2, contact discharge
method (I/O pins)
IEC 61000-4-2, contact discharge
method (V
3.3
pin)
Note 1
Note 1
Note 1
±30
±15
±25
kV
kV
kV
V
CLAMP
Clamping Voltage during ESD
Discharge
Positive
Negative
MIL-STD-883, Method 3015, 8kV;
Note 1
10
-5
V
V
Note 1: ESD applied to input/output/V
3.3
pins with respect to GND, one at a time. Clamping voltage is measured at the opposite
side of the EMI filter to the ESD pin (i.e., if ESD is applied to pin 1, then clamping voltage is measured at pin 6). Unused
pins are open.
