SIR774DP-T1-GE3 Datasheet SIR774DP-T1-GE3 | P1-P3

Vishay Siliconix

SiR774DP

New Product

Document Number: 63285

S12-0216-Rev. B, 30-Jan-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• SkyFET

®

Monolithic TrenchFET

®

Power MOSFET and Schottky Diode

• 100 % R

g

and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• VRM, POL, Server

• Notebook

- Low-Side

- Vcore

- Memory

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω) Max.

I

D

(A)

a

Q

g

(Typ.)

30

0.0026 at V

GS

= 10 V

40

28.5 nC

0.0034 at V

GS

= 4.5 V

40

Ordering Information:

SiR774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

®

SO-8

Bottom View

N-Channel MOSFET

G

S

D

Schottky Diode

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

40

a

A

T

C

= 70 °C

40

a

T

A

= 25 °C

32

b, c

T

A

= 70 °C

25.6

b, c

Pulsed Drain Current (t = 300 µs)

I

DM

80

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

40

a

T

A

= 25 °C

8

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

30

Single Pulse Avalanche Energy

E

AS

45

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

62.5

W

T

C

= 70 °C

40

T

A

= 25 °C

5

b, c

T

A

= 70 °C

3.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s R

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

1.6 2.0

www.vishay.com

2

Document Number: 63285

S12-0216-Rev. B, 30-Jan-12

Vishay Siliconix

SiR774DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 µA 30

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 1 2.2

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 30 V, V

GS

= 0 V 0.07 0.30

mA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 100 °C 5.5 50

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V 30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A 0.0021 0.0026

Ω

V

GS

= 4.5 V, I

D

= 10 A 0.0027 0.0034

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 15 A 95 S

Dynamic

b

Input Capacitance C

iss

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

3140

pFOutput Capacitance C

oss

705

Reverse Transfer Capacitance C

rss

285

Total Gate Charge Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 10 A 58 87

nC

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 10 A

28.5 42.5

Gate-Source Charge Q

gs

7.6

Gate-Drain Charge Q

gd

9.4

Gate Resistance R

g

f = 1 MHz 0.2 0.95 1.9 Ω

Tur n - O n D e l ay Time t

d(on)

V

DD

= 15 V, R

L

= 1.5 Ω

I

D

≅ 10 A, V

GEN

= 10 V, R

g

= 1 Ω

12 24

ns

Rise Time t

r

10 20

Turn-Off Delay Time t

d(off)

33 65

Fall Time t

f

10 20

Tur n - O n D e l ay T im e t

d(on)

V

DD

= 15 V, R

L

= 1.5 Ω

I

D

≅ 10 A, V

GEN

= 4.5 V, R

g

= 1 Ω

24 45

Rise Time t

r

24 45

Turn-Off Delay Time t

d(off)

33 65

Fall Time t

f

12 24

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C 40

A

Pulse Diode Forward Current

a

I

SM

80

Body Diode Voltage V

SD

I

S

= 5 A 0.41 0.6 V

Body Diode Reverse Recovery Time t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

29 55 ns

Body Diode Reverse Recovery Charge Q

rr

17.5 33 nC

Reverse Recovery Fall Time t

a

15

ns

Reverse Recovery Rise Time t

b

14

Document Number: 63285

S12-0216-Rev. B, 30-Jan-12

www.vishay.com

3

Vishay Siliconix

SiR774DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0 0.5 1 1.5 2 2.5

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V thru 4 V

V

GS

= 2 V

V

GS

= 3 V

0.0015

0.0019

0.0023

0.0027

0.0031

0.0035

0 10 20 30 40 50

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 12 24 36 48 60

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 15 V

V

DS

= 20 V

V

DS

= 10 V

I

D

= 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0 1 2 3 4 5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

820

1640

2460

3280

4100

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50-250 255075100125150

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

I

D

= 15 A

V

GS

= 10 V

V

GS

= 4.5 V

SIR774DP-T1-GE3

SIR774DP-T1-GE3

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