SIRA72DP-T1-GE3 Datasheet SIRA72DP-T1-GE3 | P1-P3

SiRA72DP

www.vishay.com

Vishay Siliconix

S17-0011-Rev. A, 16-Jan-17

1

Document Number: 76508

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• Tuned for the lowest R

DS

-Q

oss

FOM

• 100 % R

g

and UIS tested

•Q

gd

/Q

gs

ratio < 1 optimizes switching

characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters

• Battery and load switch

Notes

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

PRODUCT SUMMARY

V

DS

(V) 40

R

DS(on)

max. () at V

GS

= 10 V 0.00350

R

DS(on)

max. () at V

GS

= 4.5 V 0.00480

Q

g

typ. (nC) 19.5

I

D

(A) 60

Configuration Single

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package PowerPAK SO-8

Lead (Pb)-free and halogen-free SiRA72DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

40

V

Gate-source voltage V

GS

+20, -16

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

60

g

A

T

C

= 70 °C 60

a

T

A

= 25 °C 27.6

b, c

T

A

= 70 °C 21.8

b, c

Pulsed drain current (t = 100 μs) I

DM

150

Continuous source-drain diode current

T

C

= 25 °C

I

S

25.1

T

A

= 25 °C 4.3

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

20

Single pulse avalanche Energy E

AS

20 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

56.8

W

T

C

= 70 °C 36.3

T

A

= 25 °C 4.8

b, c

T

A

= 70 °C 3

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b, f

t  10 s R

thJA

22 26

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

1.8 2.2

SiRA72DP

www.vishay.com

Vishay Siliconix

S17-0011-Rev. A, 16-Jan-17

2

Document Number: 76508

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 40 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= 250 μA

-25-

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

--5.3-

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.1 - 2.4 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +20, -16 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 40 V, V

GS

= 0 V - - 1

μA

V

DS

= 40 V, V

GS

= 0 V, T

J

= 55 °C - - 10

On-state drain current

a

I

D(on)

V

DS

 5 V, V

GS

= 10 V 30 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 10 A - 0.00285 0.00350



V

GS

= 4.5 V, I

D

= 10 A - 0.00385 0.00480

Forward transconductance

a

g

fs

V

DS

= 10 V, I

D

= 10 A - 76 - S

Dynamic

b

Input capacitance C

iss

V

DS

= 20 V, V

GS

= 0 V, f = 1 MHz

- 3240 -

pFOutput capacitance C

oss

- 455 -

Reverse transfer capacitance C

rss

-60-

C

rss

/C

iss

ratio - 0.026 0.052

Total gate charge Q

g

V

DS

= 20 V, V

GS

= 10 V, I

D

= 10 A - 41.5 63

nCV

DS

= 20 V, V

GS

= 4.5 V, I

D

= 10 A

-19.530

Gate-source charge Q

gs

-8.7-

Gate-drain charge Q

gd

-4.2-

Output charge Q

oss

V

DS

= 20 V, V

GS

= 0 V - 18.5 28

Gate resistance R

g

f = 1 MHz 0.5 1.4 2.5 

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 2 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

-1020

ns

Rise time t

r

-2040

Turn-off delay time t

d(off)

-2448

Fall time t

f

-714

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 2 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

-2958

Rise time t

r

-85170

Turn-off delay time t

d(off)

-3060

Fall time t

f

-3670

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - 25.1

A

Pulse diode forward current (t

p

= 100 μs) I

SM

--150

Body diode voltage V

SD

I

S

= 5 A - 0.74 1.1 V

Body diode reverse recovery time t

rr

I

F

= 10 A, dI/dt = 100 A/μs,

T

J

= 25 °C

-3162ns

Body diode reverse recovery charge Q

rr

-2346nC

Reverse recovery Fall time t

a

-15-

ns

Reverse recovery rise time t

b

-16-

SiRA72DP

www.vishay.com

Vishay Siliconix

S17-0011-Rev. A, 16-Jan-17

3

Document Number: 76508

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

20

40

60

80

100

00.511.522.5

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 2 V

V

GS

= 3 V

10

100

1000

10000

0.001

0.002

0.003

0.004

0.005

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 9 18 27 36 45

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 30 V

V

DS

= 20 V

V

DS

= 10 V

I

D

= 10 A

10

100

1000

10000

0

30

60

90

120

150

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

800

1600

2400

3200

4000

0 8 16 24 32 40

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.5

0.8

1.1

1.4

1.7

2.0

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 10 A

V

GS

= 10 V

V

GS

= 4.5 V

SIRA72DP-T1-GE3

SIRA72DP-T1-GE3

Products related to this Datasheet