www.vishay.com Document Number: 90365
4 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 90365 www.vishay.com
S11-1063-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width 1 µs
Duty factor 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
www.vishay.com Document Number: 90365
6 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
Q
GS
Q
GD
Q
G
V
G
Charge
10 V

IRFZ14SPBF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Chan 60V 10 Amp 200mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union