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BT138X-800,127

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
F
BT138X-800
4Q Triac
1 May 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated four quadrant triac in a SOT186A (TO-220F) "full pack" plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
High blocking voltage capability
•
High noise immunity
•
Isolated package
•
Less sensitive gate for improved noise immunity
•
Planar passivated for voltage ruggedness and reliability
•
Triggering in all four quadrants
3. Applications
•
General purpose motor control
•
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 95 A
T
j
junction temperature - - 125 °C
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 56 °C; Fig. 1; Fig. 2;
Fig. 3
- - 12 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 35 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 35 mA
NXP Semiconductors
BT138X-800
4Q Triac
BT138X-800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 10 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 22 70 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100 250 - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT138X-800 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
BT138X-800/L02 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Marking
Table 4. Marking codes
Type number Marking code
BT138X-800 BT138X-800
BT138X-800/L02
P1-P3P4-P6P7-P9P10-P12P13-P14

BT138X-800,127

Mfr. #:
Buy BT138X-800,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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