© TT electronics plc
Issue B 09/2017 Page 2
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.electronics.com | sensors@electronics.com
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
NPN Silicon Phototransistor
OP600 Series
Absolute Maximum Rangs (TA = 25˚C unless otherwise noted)
Collector-Emier Voltage 25 V
Emier-Collector Voltage 5 V
Storage Temperature Range -65° C to +150° C
Operang Temperature Range -65° C to +125° C
Soldering Temperature (5 seconds with soldering iron) 260° C
(1)(2)
Power Dissipaon 50 mW
(3)
Connuous Collector Current 50 mA
Electrical Characteriscs (T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
I
C(ON)
(4)
On-State Collector Current
OP600A
OP600B
OP600C
OP643SL
OP644SL
1.2
0.6
0.3
4.0
7.0
-
-
-
-
-
-
-
1.8
1.8
1.8
8.0
22.0
V
CE
= 5 V, E
E
= 2.5 mW/cm
2(5)
mA
V
CE
= 5 V, E
E
= 20 mW/cm
2(5)
I
CEO
Collector-Dark Current - - - nA
V
CE
= 10 V, E
E
= 0
V
(BR)CEO
Collector-Emier Breakdown Voltage 25 - - V
I
C
= 100 μA
V
(BR)ECO
Emier-Collector Breakdown Voltage 5 - - V I
E
= 100 μA
V
CE(SAT)
(4)
Collector-Emier
OP600 (A, B, C)
(2)(7)
OP643-644 (SL)
(2)(7)
- - 0.4 V
I
C
= 0.15 mA, E
E
= 2.5 mW/cm
2(5)
I
C
= 0.4 mA, E
E
= 20 mW/cm
2(5)
t
r
Rise Time - 15 - µs
V
cc
= 5 V, I
C
= 0.80 mA,
R
L
= 1 kΩ, See Test Circuit
t
f
Fall Time - 15 - µs
V
cc
= 5 V, I
C
= 0.80 mA,
R
L
= 1 kΩ, See Test Circuit
Notes:
(1) Refer to Applicaon Bulleng 202, which discusses proper techniques for soldering pill-type devices to PCBoards.
(2) No clean or low solids. RMA ux is recommended. Duraon can be extended to 10 seconds maximum when ow soldering.
(3) Derate linearly 0.5 mW/° C above 25° C.
(4) Juncon temperature maintained at 25° C.
(5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm
2
. The
source irradiance is not necessarily uniform over the enre lens area of the unit being tested.
(6) For OP643SL and OP644SL, light source is an unltered tungsten bulb operang at CT = 2870 K or equivalent infrared source.
