IXBX64N250 Datasheet IXBX64N250 | P1-P3

Features

z

High Blocking Voltage

z

Low Switching Losses

z

High Current Handling Capability

z

Anti-Parallel Diode

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Uninterrupted Power Supplies (UPS)

z

Capacitor Discharge Circuits

z

Laser Generators

DS99832B(08/11)

High Voltage, High Gain

BiMOSFET

TM

Monolithic Bipolar

MOS Transistor

IXBK64N250

IXBX64N250

V

CES

= 2500V

I

C110

= 64A

V

CE(sat)

≤≤

≤ 3.0V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 2500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 2500 V

V

GES

Continuous ±25 V

V

GEM

Transient ±35 V

I

C25

T

C

= 25°C (Chip Capability) 156 A

I

LRMS

Lead Current Limit, RMS 120 A

I

C100

T

C

= 110°C 64 A

I

CM

T

C

= 25°C, 1ms 600 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 1Ω I

CM

= 160 A

(RBSOA) Clamped Inductive Load V

CE

< 0.8 • V

CES

T

SC

V

GE

= 15V, T

J

= 125°C,

(SCSOA) R

G

= 5Ω, V

CE

=

1250V, Non-Repetitive 10 μs

P

C

T

C

= 25°C 735 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062 in.) from Case for 10 260 °C

M

d

Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 1mA, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 4mA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 50 μA

T

J

= 125°C 6 mA

I

GES

V

CE

= 0V, V

GE

= ± 25V ±200 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15V, Note 1 2.5 3.0 V

T

J

= 125°C 3.1 V

G = Gate C = Collector

E = Emitter Tab = Collector

PLUS247

TM

(IXBX)

TO-264 (IXBK)

E

G

C

Tab

G

C

E

IXBK64N250

IXBX64N250

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Reverse Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max

V

F

I

F

= I

C110

, V

GE

= 0V, Note 1 3.0 V

t

rr

160 ns

I

RM

480 A

I

F

= I

C110

, V

GE

= 0V, -di

F

/dt = 650A/μs

V

R

= 600V, V

GE

= 0V

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= I

C110

, V

CE

= 10V, Note 1 40 72 S

C

ies

8900 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 345 pF

C

res

118 pF

Q

g

400 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 600V 46 nC

Q

gc

155 nC

t

d(on)

49 ns

t

r

318 ns

t

d(off)

232 ns

t

f

170 ns

t

d(on)

54 ns

t

r

578 ns

t

d(off)

222 ns

t

f

175 ns

R

thJC

0.17 °C/W

R

thCS

0.15 °C/W

Resistive Switching Times, T

J

= 125°C

I

C

= 128A, V

GE

= 15V, tp = 1μs

V

CE

= 1250V, R

G

= 1Ω

Resistive Switching Times, T

J

= 25°C

I

C

= 128A, V

GE

= 15V, tp = 1μs

V

CE

= 1250V, R

G

= 1Ω

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Additional provisions for lead-to-lead isolation are required at V

CE

>1200V.

TO-264 Outline

PLUS247

TM

Outline

Terminals: 1 - Gate

2 - Collector

3 - Emitter

4 - Collector

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXBK64N250

IXBX64N250

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 2. Output Characteristics @ T

J

= 125ºC

0

30

60

90

120

150

180

210

240

270

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

V

CE

- Volts

I

C

- Amperes

10V

V

GE

= 25V

20V

15V

5V

Fig. 3. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 256A

I

C

= 64A

I

C

= 128A

Fig. 4. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

5 7 9 11 13 15 17 19 21 23 25

V

GE

- Volts

V

CE

- Volts

I

C

= 256A

128A

64A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Breakdown & Threshold Voltages

vs. Junction Temperature

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-55 -35 -15 5 25 45 65 85 105 125

T

J

- Degrees Centigrade

BV

CES

&

V

GE(

th

)

- Normalized

BV

CES

V

GE(

th

)

IXBX64N250

IXBX64N250

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