CM1248-08DE

© Semiconductor Components Industries, LLC, 2011
August, 2017 Rev. 4
1 Publication Order Number:
CM124808DE/D
CM1248-08DE
ESD Protection Diode
Low Capacitance
Features
Low I/O Capacitance at 10 pF at 0 V
InSystem ESD Protection to ±15 kV Contact Discharge,
per the IEC 6100042 International Standard
Compact SMT Package Saves Board Space and Facilitates Layout
in SpaceCritical Applications
Each I/O Pin Can Withstand over 1000 ESD Strikes
These Devices are PbFree and are RoHS Compliant
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
UDFN8
DE SUFFIX
CASE 517BC
www.onsemi.com
CM124808DE uDFN8
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BLOCK DIAGRAM
CM124808DE
123
876
V
N
DAP
4
5
Note: DAP (Die Attach Pad)
is on backside of chip.
1
8
L48 MG
G
1
L48 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
CM124808DE
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2
Top View
8Lead uDFN
CM124808DE
CH1 (1)
CH2 (2)
PACKAGE / PINOUT DIAGRAMS
CH3 (3)
CH4 (4)
CH8 (8)
CH7 (7)
CH6 (6)
CH5 (5)
Table 1. PIN DESCRIPTIONS
Pins Name Description
(Refer to package / pinout diagrams) CHx The cathode of the respective surge protection diode, which should be connected to
the node requiring transient voltage protection.
(Refer to package / pinout diagrams) V
N
The anode of the surge protection diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Storage Temperature Range 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature 40 to +85 °C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter Conditions Min Typ Max Unit
C
IN
Channel Input Capacitance
T
A
= 25°C, 0 VDC, 1 MHz 10 pF
0 VDC, 1 MHz 7 15 pF
DC
IN
Differential Channel I/O to GND Capacitance T
A
= 25°C, 2.5 VDC, 1 MHz 0.19 pF
V
RSO
Reverse Standoff Voltage
I
R
= 10 mA, T
A
= 25°C
5.5 V
I
R
= 1 mA, T
A
= 25°C 6.1 V
I
LEAK
Leakage Current
V
IN
= 5.0 VDC, T
A
= 25°C 0.25
mA
V
IN
= 5.0 VDC 0.75
mA
V
SIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 10 mA, T
A
= 25°C
I = 10 mA, T
A
= 25°C
6.8
0.89
V
V
ESD
ESD Withstand Voltage
Contact Discharge per IEC 6100042 standard
T
A
= 25°C
(Notes 2 and 3)
±15
kV
R
D
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
T
A
= 25°C, I
PP
= 1 A, t
P
= 8/20 ms
0.57
1.36
W
1. All parameters specified at T
A
= 40°C to +85°C unless otherwise noted.
2. Standard IEC 6100042 with C
Discharge
= 150 pF, R
Discharge
= 330 W, V
N
grounded.
3. These measurements performed with no external capacitor on CH
X
.
CM124808DE
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3
PERFORMANCE INFORMATION
Diode Capacitance
Typical diode capacitance with respect to positive cathode voltage (reverse voltage across the diode) is given in Diode
Capacitance vs. Reverse Voltage.
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms.
Figure 2. Typical Input VI Characteristics
(Pulsemode Measurements, Pulse Width = 0.7 ms nominal)

CM1248-08DE

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diode Arrays 8-Ch.10pF typ 2 DIE Low Capacitance
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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