Product Standards
Zener Diode
DD5X062J0R
Absolute Maximum Ratings Ta = 25 C
*1:
PT = 200mW achieved with a printed circuit board. (4 Diode total)
*2:
Electrical Characteristics Ta = 25 C 3 C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
+85 °COperating ambient temperature Topr -40 to
pFTerminal Capacitance Ct VR = 0 V, f = 1 MHz 10
3 μAIR VR = 5.5 V
Zener rise operating resistance RZK IZ = 0.5 mA
Total power dissipation
*1
PT 200 mW
Electrostatic discharge
*2
ESD
+150 °C
Repetitive peak forward current IFRM 200 mA
Storage temperature Tstg -55 to
±15
Temperature coefficient of zener voltage
*3
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
Symbol Rating Unit
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
Marking Symbol
51
Code
1. Cathode1
2.
Anode1,2,3,4
MO-178
Panasonic
Parameter
DD5X062J0R
Silicon epitaxial planar type
For surge absorption circuit
DD3X062J in Mini5 type package
Features
Low terminal capacitance Ct
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Mini5-G3-B
JEITA SC-74A
3. Cathode2
4. Cathode3
5. Cathode4
1of4
Unit: mm
Min Typ
kV
Junction temperature Tj 150 °C
V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
UnitMax
100
Basic Part Number :
Quad. DD2S062 (Common anode)
Internal Connection
V
30
5.90 6.50
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
mV/°C
1.0
2.5
2.8
2.9
1.1
1.5
0.3
1.9
0.13
(0.95)(0.95)
123
45
123
45
