Vishay Siliconix
Si7958DP
Document Number: 72661
S09-0223-Rev. C, 09-Feb-09
www.vishay.com
1
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package
• Dual MOSFET for Space Savings
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
40
0.0165 at V
GS
= 10 V 11.3
0.020 at V
GS
= 4.5 V 10.3
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerP AK
-8
Si7958DP-T1-E3 (Lead (Pb)-free)
Si7958DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Ordering Information:
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFE
D
2
G
2
S
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
11.3 7.2
A
T
A
= 70 °C
9.0 5.8
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
2.9 1.2
Single Avalanche Current L = 0.1 mH
I
AS
35
Single Avalanche Energy
E
AS
61
mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.4
W
T
A
= 70 °C
2.2 0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
26 35
°C/WSteady State 60 85
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.2 2.7