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EFC2J013NUZTDG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number :
August 2017 - Rev. 0 EFC2J013NUZ/D
www.onsemi.com
EFC2J013NUZ
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12 V, 5.8 mΩ, 17 A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
Features
2.5 V Drive
2 kV ESD HBM
Common-Drain Type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Applications
1-Cell Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta = 25C (Note 1)
Parameter Symbol Value Unit
Source to Source Voltage V
SSS
12 V
Gate to Source Voltage
V
GSS
8 V
Source Current (DC) I
S
17 A
Source Current (Pulse)
PW 10 s, duty cycle 1%
I
SP
68
A
Total Dissipation (Note 2)
P
T
1.8 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg 55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Ambient (Note 2)
R
JA
69.4
C/W
Note 2 : Surface mounted on ceramic substrate (5000 mm
2
0.8 mm).
4, 6
1, 3
5
2
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
NT = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Assembly Lot
= Pb-Free Package
NT
AYWZZ
WLCSP6
2.00x1.49x0.10
ELECTRICAL CONNECTION
N-Channel
V
SSS
R
SS
(on) Max I
S Max
12 V
5.8 m @ 4.5 V
17 A
6.2 m @ 3.8 V
7.5 m @ 3.1 V
9.0 m @ 2.5 V
MARKING DIAGRAM
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
PIN ASSIGNMENT
S1
S2
G1
G2
S1
S2
1
2
3
6
5
4
Bottom View
EFC2J013NUZ
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2
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter Symbol Conditions
Value
Unit
min typ max
Source to Source Breakdown
Voltage
V(
BR
)
SSS
I
S
= 1 mA, V
GS
= 0 V 12 V
Zero-Gate Voltage Source Current I
SSS
V
SS
= 10 V, V
GS
= 0 V 1 A
Gate to Source Leakage Current I
GSS
V
GS
= 8 V, V
SS
= 0 V 1 A
Gate Threshold Voltage V
GS
(th) V
SS
= 6 V, I
S
= 1 mA 0.4 1.3 V
Static Source to Source On-State
Resistance
R
SS
(on)
I
S
= 5 A, V
GS
= 4.5 V 3.0 4.35 5.8 m
I
S
= 5 A, V
GS
= 3.8 V
3.2 4.6 6.2 m
I
S
= 5 A, V
GS
= 3.1 V
3.4 5.0 7.5 m
I
S
= 5 A, V
GS
= 2.5 V
3.8 5.6 9.0 m
Turn-ON Delay Time
t
d
(on)
V
SS
= 5 V, V
GS
= 3.8 V
I
S
= 5 A, Rg = 10 k
Switching Test Circuit
11
s
Rise Time
t
r
26
s
Turn-OFF Delay Time
t
d
(off)
130
s
Fall Time
t
f
73
s
Total Gate Charge Qg V
SS
= 5 V, V
GS
= 4.5 V, I
S
= 5 A
37
nC
Forward Source to Source Voltage
V
F(S-S)
I
S
= 3 A, V
GS
= 0 V 0.76 1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Test Circuit
G2
G1
S1
S2
V
RL
t
d
(on), t
r,
t
d
(off), t
f
V
SS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Rg
EFC2J013NUZ
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3
TYPICAL CHARACTERISTICS
I
S
= 5 A
Single pulse
V
SS
= 5 V
V
GS
= 3.8 V
I
S
= 5 A
t
d
(off)
t
f
t
r
t
d
(on)
Ta = 25C
Single pulse
V
SS
= 6 V
Single pulse
I
S
= 5 A, V
GS
= 2.5 V
I
S
= 5 A, V
GS
= 3.1 V
I
S
= 5 A, V
GS
= 4.5 V
I
S
= 5 A, V
GS
= 3.8 V
Ta = 75C
25C
--25
C
V
GS
= 0 V
Ta = 75C
25
C
--25
C
V
GS
= 2.5 V
4.5 V
3.8 V
3.1 V
Single pulse
Gate to Source Voltage, V
GS
– V
12
3
567
5.5
6.5
Static Source to Source
On State Resistance, R
SS(on)
– m
Figure 3. On-Resistance vs. Gate-to-Source Voltage
4
7.0
8.0
8
-60 -40 -20 0 20 40 60 160
2
3
4
5
6
7
Static Source to Source
On State Resistance, R
SS(on)
– m
80 100 120 140
8
Ambient Temperature, Ta – C
Figure 4. On-Resistance vs. Temperature
Gate Resistance, Rg
– k
0.1 10
100
1000
Swiching Time, S/W – s
Figure 6. Switching Time vs. Gate Resistance
10
1
Figure 5. Forward Source-to-Source Voltage vs. Current
0.001
0.01
1.0
10.0
Source Current, I
S
– A
1.0
2.0
3.0
4.0
Source Current, I
S
– A
5.0
6.0
0
Source to Source Voltage, V
SS
–
V
0 0.005 0.01 0.015 0.025
Figure 1. On-Region Characteristics
Gate to Source Voltage, V
GS
– V
0 0.6 1.0
1.2
1.4
Figure 2. Transfer Characteristics
0.02
0
6
9
Source Current, I
S
– A
12
3
Forward Source to Source Voltage, V
F(S-S)
– V
0 0.4 0.6 1.0
0.2
0.8
0.03
0.035
0.8
Ta = 75C
25C
--25
C
7.5
6.0
5.0
4.5
4.0
3.5
3.0
9
10
0.1
1.2
P1-P3P4-P6

EFC2J013NUZTDG

Mfr. #:
Buy EFC2J013NUZTDG
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH 12V 17A WLCSP DUAL
Lifecycle:
New from this manufacturer.
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