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IXFR90N30

P1-P2
© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 300 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 300 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 75 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
360 A
I
A
T
C
= 25°C90A
E
AS
T
C
= 25°C3J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 5 V/ns
P
D
T
C
= 25°C 417 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
V
ISOL
50/60 Hz, 1 Minute 2500 V~
F
C
Mounting Force 20..120/4.5..27 N/lb
Weight 5 g
DS98764A(6/13)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 300 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 2.0 4.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 100 μA
T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 45A, Note 1 36 mΩ
HiPerFET
TM
Power MOSFET
IXFR90N30
V
DSS
= 300V
I
D25
= 75A
R
DS(on)
≤≤
≤≤
≤ 36m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250ns
Features
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z
Isolated Mounting Surface
z
2500V~ Electrical Isolation
z
Avalanche Rated
z
Fast Intrinsic Rectifier
z
Low R
DS(ON)
and Q
G
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC & DC Motor Controls
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
D
Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
(Electrically Isolated Tab)
IXFR90N30
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 45A, Note 1 40 70 S
C
iss
10 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1800 pF
C
rss
700 pF
t
d(on)
42 ns
t
r
55 ns
t
d(off)
100 ns
t
f
40 ns
Q
g(on)
360 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 45A 60 nC
Q
gd
180 nC
R
thJC
0.30 °C/W
R
thCS
0.15 °C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 45A
R
G
= 2Ω (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 90 A
I
SM
Repetitive, Pulse Width Limited by T
JM
360 A
V
SD
I
F
= 45A, V
GS
= 0V, Note 1 1.5 V
t
rr
250 ns
Q
RM
1.4 μC
I
RM
10
A
I
F
= 50A, -di/dt = -100A/μs
V
R
= -100V, V
GS
= 0V
ISOPLUS247 (IXFR) Outline
1 - Gate
2 - Drain
3 - Source
P1-P2

IXFR90N30

Mfr. #:
Buy IXFR90N30
Manufacturer:
Littelfuse
Description:
MOSFET 75 Amps 300V 0.033 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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