IXA20IF1200HB
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
=600V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
=600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
=600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
Diode
IGBT
Inverter-IGBT Inverter-FRD
R
i
t
i
R
i
t
i
1 0.15 0.0006 0.231 0.0005
2 0.28 0.2 0.212 0.004
3 0.16 0.006 0.19 0.02
4 0.17 0.05 0.267 0.15
Diode
IXYS reserves the right to change limits, conditions and dimensions.
20100102aData according to IEC 60747and per semiconductor unless otherwise specified
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